JPS56501146A - - Google Patents
Info
- Publication number
- JPS56501146A JPS56501146A JP50220980A JP50220980A JPS56501146A JP S56501146 A JPS56501146 A JP S56501146A JP 50220980 A JP50220980 A JP 50220980A JP 50220980 A JP50220980 A JP 50220980A JP S56501146 A JPS56501146 A JP S56501146A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7484079A | 1979-09-13 | 1979-09-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56501146A true JPS56501146A (de) | 1981-08-13 |
Family
ID=22121989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50220980A Pending JPS56501146A (de) | 1979-09-13 | 1980-09-11 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0035558A1 (de) |
| JP (1) | JPS56501146A (de) |
| WO (1) | WO1981000790A1 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08306687A (ja) * | 1995-05-10 | 1996-11-22 | Nec Corp | 半導体装置およびその製造方法 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58500683A (ja) * | 1981-05-11 | 1983-04-28 | エヌ・シ−・ア−ル・コ−ポレ−シヨン | 閾値変更可能半導体メモリ−装置 |
| US5168334A (en) * | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
| US4870470A (en) * | 1987-10-16 | 1989-09-26 | International Business Machines Corporation | Non-volatile memory cell having Si rich silicon nitride charge trapping layer |
| US6297096B1 (en) * | 1997-06-11 | 2001-10-02 | Saifun Semiconductors Ltd. | NROM fabrication method |
| US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| US6348711B1 (en) | 1998-05-20 | 2002-02-19 | Saifun Semiconductors Ltd. | NROM cell with self-aligned programming and erasure areas |
| US6215148B1 (en) | 1998-05-20 | 2001-04-10 | Saifun Semiconductors Ltd. | NROM cell with improved programming, erasing and cycling |
| US6429063B1 (en) | 1999-10-26 | 2002-08-06 | Saifun Semiconductors Ltd. | NROM cell with generally decoupled primary and secondary injection |
| US6490204B2 (en) | 2000-05-04 | 2002-12-03 | Saifun Semiconductors Ltd. | Programming and erasing methods for a reference cell of an NROM array |
| US7272175B2 (en) | 2001-08-16 | 2007-09-18 | Dsp Group Inc. | Digital phase locked loop |
| US7098107B2 (en) | 2001-11-19 | 2006-08-29 | Saifun Semiconductor Ltd. | Protective layer in memory device and method therefor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4151021A (en) * | 1977-01-26 | 1979-04-24 | Texas Instruments Incorporated | Method of making a high density floating gate electrically programmable ROM |
-
1980
- 1980-09-11 JP JP50220980A patent/JPS56501146A/ja active Pending
- 1980-09-11 WO PCT/US1980/001179 patent/WO1981000790A1/en not_active Application Discontinuation
-
1981
- 1981-03-23 EP EP19800901882 patent/EP0035558A1/de not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08306687A (ja) * | 1995-05-10 | 1996-11-22 | Nec Corp | 半導体装置およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1981000790A1 (en) | 1981-03-19 |
| EP0035558A1 (de) | 1981-09-16 |