JPS56500067A - - Google Patents

Info

Publication number
JPS56500067A
JPS56500067A JP50027579A JP50027579A JPS56500067A JP S56500067 A JPS56500067 A JP S56500067A JP 50027579 A JP50027579 A JP 50027579A JP 50027579 A JP50027579 A JP 50027579A JP S56500067 A JPS56500067 A JP S56500067A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50027579A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS56500067A publication Critical patent/JPS56500067A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32862In situ cleaning of vessels and/or internal parts
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
JP50027579A 1978-12-29 1979-12-27 Pending JPS56500067A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97441578A 1978-12-29 1978-12-29

Publications (1)

Publication Number Publication Date
JPS56500067A true JPS56500067A (ja) 1981-01-22

Family

ID=25522014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50027579A Pending JPS56500067A (ja) 1978-12-29 1979-12-27

Country Status (4)

Country Link
EP (1) EP0020746B1 (ja)
JP (1) JPS56500067A (ja)
DE (1) DE2965333D1 (ja)
WO (1) WO1980001363A1 (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0752718B2 (ja) * 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US4998979A (en) * 1988-06-06 1991-03-12 Canon Kabushiki Kaisha Method for washing deposition film-forming device
US4896813A (en) * 1989-04-03 1990-01-30 Toyo Kohan Co., Ltd. Method and apparatus for cold rolling clad sheet
SE465100B (sv) * 1989-06-30 1991-07-22 Inst Mikroelektronik Im Foerfarande och anordning foer att i en kallvaeggsreaktor behandla en kiselskiva
DE3923685A1 (de) * 1989-07-18 1991-01-24 Rheydt Kabelwerk Ag Verfahren zum reinigen von gegenstaenden
US5643639A (en) * 1994-12-22 1997-07-01 Research Triangle Institute Plasma treatment method for treatment of a large-area work surface apparatus and methods
US6193802B1 (en) 1995-09-25 2001-02-27 Applied Materials, Inc. Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment
US6187072B1 (en) * 1995-09-25 2001-02-13 Applied Materials, Inc. Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions
US6045618A (en) * 1995-09-25 2000-04-04 Applied Materials, Inc. Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment
US6194628B1 (en) 1995-09-25 2001-02-27 Applied Materials, Inc. Method and apparatus for cleaning a vacuum line in a CVD system
US6264812B1 (en) 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
US6354241B1 (en) 1999-07-15 2002-03-12 Applied Materials, Inc. Heated electrostatic particle trap for in-situ vacuum line cleaning of a substrated processing
US6255222B1 (en) 1999-08-24 2001-07-03 Applied Materials, Inc. Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process
DE10115394B4 (de) * 2001-03-29 2005-03-24 Christof Diener Maschinenbauteil und/oder verfahrenstechnische Anlage mit einem Hohlraum und Reinigungsverfahren hierfür
DE102010062082A1 (de) 2010-11-29 2012-05-31 4Jet Sales + Service Gmbh Reinigen von Oberflächen in Vakuumapparaturen mittels Laser
WO2013092770A1 (en) * 2011-12-22 2013-06-27 Solvay Sa Method for removing deposits performed with varying parameters
CN117265502B (zh) * 2023-09-22 2024-04-26 安徽旭合新能源科技有限公司 一种cvd镀膜炉管和炉壁薄膜的清除方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3652324A (en) * 1968-08-15 1972-03-28 Westinghouse Electric Corp A METHOD OF VAPOR DEPOSITING A LAYER OF Si{11 N{11 {0 ON A SILICON BASE
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
US3867216A (en) * 1972-05-12 1975-02-18 Adir Jacob Process and material for manufacturing semiconductor devices
US3795557A (en) * 1972-05-12 1974-03-05 Lfe Corp Process and material for manufacturing semiconductor devices
US3971684A (en) * 1973-12-03 1976-07-27 Hewlett-Packard Company Etching thin film circuits and semiconductor chips
US4123663A (en) * 1975-01-22 1978-10-31 Tokyo Shibaura Electric Co., Ltd. Gas-etching device
JPS5211175A (en) * 1975-07-18 1977-01-27 Toshiba Corp Activated gas reacting apparatus
GB1550853A (en) * 1975-10-06 1979-08-22 Hitachi Ltd Apparatus and process for plasma treatment
JPS5378170A (en) * 1976-12-22 1978-07-11 Toshiba Corp Continuous processor for gas plasma etching
US4138306A (en) * 1976-08-31 1979-02-06 Tokyo Shibaura Electric Co., Ltd. Apparatus for the treatment of semiconductors
JPS53121469A (en) * 1977-03-31 1978-10-23 Toshiba Corp Gas etching unit
US4158589A (en) * 1977-12-30 1979-06-19 International Business Machines Corporation Negative ion extractor for a plasma etching apparatus

Also Published As

Publication number Publication date
DE2965333D1 (en) 1983-06-09
EP0020746A1 (en) 1981-01-07
EP0020746A4 (en) 1981-06-16
EP0020746B1 (en) 1983-05-04
WO1980001363A1 (en) 1980-07-10

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