JPS5648189A - Method of forming photothyristor circuit - Google Patents

Method of forming photothyristor circuit

Info

Publication number
JPS5648189A
JPS5648189A JP12315379A JP12315379A JPS5648189A JP S5648189 A JPS5648189 A JP S5648189A JP 12315379 A JP12315379 A JP 12315379A JP 12315379 A JP12315379 A JP 12315379A JP S5648189 A JPS5648189 A JP S5648189A
Authority
JP
Japan
Prior art keywords
turn
time
photothyristor
light
thy2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12315379A
Other languages
Japanese (ja)
Inventor
Hideo Matsuda
Yukio Igarashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12315379A priority Critical patent/JPS5648189A/en
Publication of JPS5648189A publication Critical patent/JPS5648189A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor

Abstract

PURPOSE:To make possible to conform the turn-on time of plural photothyristors by changing externally connected resistors or trigger light quantities or both of them. CONSTITUTION:The trigger light quantity of a photothyristor decreases as the resistance R between its gate and cathode increases, and its time lag therefore decreases. Therefore, when plural thyristors are connected, the values of resistors R are selected to be as large as possible within a range the rise rate of critical off voltage dV/dt withstanding amount allows. By so doing, turn-on time lags can be made equal. When applying trigger light from light emitting elements LED1, and LED2 to thyristors THY1 and THY2, for example, LED1 and LED2 are connected respectively to independent light sources 11 and 12, and the light quantity of each LED is adjusted so that the turn-on time lags of THY1 and THY2 may become equal.
JP12315379A 1979-09-27 1979-09-27 Method of forming photothyristor circuit Pending JPS5648189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12315379A JPS5648189A (en) 1979-09-27 1979-09-27 Method of forming photothyristor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12315379A JPS5648189A (en) 1979-09-27 1979-09-27 Method of forming photothyristor circuit

Publications (1)

Publication Number Publication Date
JPS5648189A true JPS5648189A (en) 1981-05-01

Family

ID=14853486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12315379A Pending JPS5648189A (en) 1979-09-27 1979-09-27 Method of forming photothyristor circuit

Country Status (1)

Country Link
JP (1) JPS5648189A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648189B2 (en) * 1979-06-21 1981-11-13
JPS62292181A (en) * 1986-06-06 1987-12-18 ケイ−ツ−、コ−ポレ−シヨン Core of ski board reinforced by fiber and apparatus and method for producing the same
US11788881B2 (en) 2020-09-03 2023-10-17 Hosiden Corporation Detection sensor and detection device including the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648189B2 (en) * 1979-06-21 1981-11-13
JPS62292181A (en) * 1986-06-06 1987-12-18 ケイ−ツ−、コ−ポレ−シヨン Core of ski board reinforced by fiber and apparatus and method for producing the same
JPH0374594B2 (en) * 1986-06-06 1991-11-27
US11788881B2 (en) 2020-09-03 2023-10-17 Hosiden Corporation Detection sensor and detection device including the same

Similar Documents

Publication Publication Date Title
GB1477908A (en) High intensity lamp dimming circuit
ES8403267A1 (en) Lamp dimming apparatus.
GB2122387B (en) Programmable controller
ES8707807A1 (en) Redundant control circuit.
JPS5648189A (en) Method of forming photothyristor circuit
GB1477318A (en) Electrical circuit means for use in analogue display and/ or control systems
ATE24789T1 (en) ELECTRICAL DEVICE WITH A CIRCUIT ARRANGEMENT FOR DISPLAYING SEVERAL OPERATING STATES BY LIGHT DIODES.
JPS527758A (en) Luminescent display
JPS5636176A (en) Light emission diode drive circuit
JPS55143081A (en) Luminous source device with light emitting element
JPS56107641A (en) Semiconductor circuit equipment
ES8406816A1 (en) Control circuit for a sensitive semiconductor device of the thyristor or triac type with an impedance for enhancing self-firing.
GB1155483A (en) Electric Current Control Apparatus
JPS5776884A (en) Driving circuit of semiconductor light emitter
JPS5296341A (en) Current controller
JPS57135671A (en) Gate circuit for thyristor converter
JPS5452877A (en) Constant current supply device in the series lighting equipment
JPS532970A (en) Fluorescent lamp starter
JPS5443447A (en) Click preventing circuit
JPS55162283A (en) Photocoupling semiconductor switch device
JPS5733829A (en) Switching circuit
GB1258106A (en)
JPS55112035A (en) Zero-cross ssr circuit
JPS53139986A (en) Switching element
JPS5422790A (en) Optical drive type semiconductor control device