JPS5646264B2 - - Google Patents

Info

Publication number
JPS5646264B2
JPS5646264B2 JP1018573A JP1018573A JPS5646264B2 JP S5646264 B2 JPS5646264 B2 JP S5646264B2 JP 1018573 A JP1018573 A JP 1018573A JP 1018573 A JP1018573 A JP 1018573A JP S5646264 B2 JPS5646264 B2 JP S5646264B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1018573A
Other languages
Japanese (ja)
Other versions
JPS4886486A (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4886486A publication Critical patent/JPS4886486A/ja
Publication of JPS5646264B2 publication Critical patent/JPS5646264B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24Frequency- independent attenuators
    • H03H7/25Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H03H7/253Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
    • H03H7/255Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode the element being a PIN diode
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
  • Bipolar Transistors (AREA)
  • Attenuators (AREA)
JP1018573A 1972-01-24 1973-01-24 Expired JPS5646264B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2203247A DE2203247C3 (de) 1972-01-24 1972-01-24 Halbleiterbauelement mit steuerbarer Dämpfung sowie Schaltungsanordnung zu dessen Betrieb

Publications (2)

Publication Number Publication Date
JPS4886486A JPS4886486A (en:Method) 1973-11-15
JPS5646264B2 true JPS5646264B2 (en:Method) 1981-10-31

Family

ID=5833870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1018573A Expired JPS5646264B2 (en:Method) 1972-01-24 1973-01-24

Country Status (10)

Country Link
US (1) US3810049A (en:Method)
JP (1) JPS5646264B2 (en:Method)
CA (1) CA971672A (en:Method)
CH (1) CH551717A (en:Method)
DE (1) DE2203247C3 (en:Method)
FR (1) FR2169579A5 (en:Method)
GB (1) GB1389349A (en:Method)
IT (1) IT971900B (en:Method)
NL (1) NL7216373A (en:Method)
SE (2) SE388739B (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62116560U (en:Method) * 1986-01-14 1987-07-24

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7215200A (en:Method) * 1972-11-10 1974-05-14
US3898686A (en) * 1974-03-11 1975-08-05 Rca Ltd Semiconductor radiation detector
US4132996A (en) * 1976-11-08 1979-01-02 General Electric Company Electric field-controlled semiconductor device
US4739252A (en) * 1986-04-24 1988-04-19 International Business Machines Corporation Current attenuator useful in a very low leakage current measuring device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3070711A (en) * 1958-12-16 1962-12-25 Rca Corp Shift register
US3432778A (en) * 1966-12-23 1969-03-11 Texas Instruments Inc Solid state microstripline attenuator
US3579059A (en) * 1968-03-11 1971-05-18 Nat Semiconductor Corp Multiple collector lateral transistor device
US3622812A (en) * 1968-09-09 1971-11-23 Texas Instruments Inc Bipolar-to-mos interface stage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62116560U (en:Method) * 1986-01-14 1987-07-24

Also Published As

Publication number Publication date
JPS4886486A (en:Method) 1973-11-15
US3810049A (en) 1974-05-07
CA971672A (en) 1975-07-22
DE2203247A1 (de) 1973-08-02
SE7512844L (sv) 1975-11-14
GB1389349A (en) 1975-04-03
CH551717A (de) 1974-07-15
DE2203247B2 (de) 1979-06-21
SE388739B (sv) 1976-10-11
IT971900B (it) 1974-05-10
SE403018B (sv) 1978-07-24
DE2203247C3 (de) 1980-02-28
NL7216373A (en:Method) 1973-07-26
FR2169579A5 (en:Method) 1973-09-07

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