JPS5640286A - Selecting method for semiconductor light-emitting element - Google Patents

Selecting method for semiconductor light-emitting element

Info

Publication number
JPS5640286A
JPS5640286A JP11649879A JP11649879A JPS5640286A JP S5640286 A JPS5640286 A JP S5640286A JP 11649879 A JP11649879 A JP 11649879A JP 11649879 A JP11649879 A JP 11649879A JP S5640286 A JPS5640286 A JP S5640286A
Authority
JP
Japan
Prior art keywords
light
emitting element
energizing
emitting portion
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11649879A
Other languages
Japanese (ja)
Inventor
Shigenobu Yamagoshi
Tomonobu Sugawara
Hisashi Hamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11649879A priority Critical patent/JPS5640286A/en
Publication of JPS5640286A publication Critical patent/JPS5640286A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To speedily and reliably discriminate between good and bad light-emitting elements that use an InGaAsP compound semiconductor by taking advantage of the fact that the energizing time needed for the observation of point defect depends on the temperature of the light-emitting portion. CONSTITUTION:When a defective light-emitting element using an In1-xGaxAs1-ypy (0<=x<1, 0<=y<=1) compound semiconductor is selected, an energizing test is performed for more than a time t [minute] 6.4X10<-3>J<-2>exp(1.2eV/RT), where T[ deg.K] is the light-emitting portion temperature and J[A/cm<2>] is the energizing electric current density. In other words, a light-emitting element 10 is mounted on a heater 11 with its InP substrate-side up, made to emit light with a current supplied, magnified by a microscope 12, and picked up by an infrared TV camera 13. As the energizing time is being recorded on a video timer 15, and the aging of the light- emitting portion is being recorded on a video tape recorder 16, the point defect is observed by using a monitor TV 14.
JP11649879A 1979-09-11 1979-09-11 Selecting method for semiconductor light-emitting element Pending JPS5640286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11649879A JPS5640286A (en) 1979-09-11 1979-09-11 Selecting method for semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11649879A JPS5640286A (en) 1979-09-11 1979-09-11 Selecting method for semiconductor light-emitting element

Publications (1)

Publication Number Publication Date
JPS5640286A true JPS5640286A (en) 1981-04-16

Family

ID=14688619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11649879A Pending JPS5640286A (en) 1979-09-11 1979-09-11 Selecting method for semiconductor light-emitting element

Country Status (1)

Country Link
JP (1) JPS5640286A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006135245A (en) * 2004-11-09 2006-05-25 Sharp Corp Semiconductor laser device and manufacturing method therefor
WO2020196739A1 (en) * 2019-03-28 2020-10-01 ウシオオプトセミコンダクター株式会社 Infrared led element
CN113646907A (en) * 2019-03-28 2021-11-12 优志旺电机株式会社 Infrared LED element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006135245A (en) * 2004-11-09 2006-05-25 Sharp Corp Semiconductor laser device and manufacturing method therefor
WO2020196739A1 (en) * 2019-03-28 2020-10-01 ウシオオプトセミコンダクター株式会社 Infrared led element
CN113646907A (en) * 2019-03-28 2021-11-12 优志旺电机株式会社 Infrared LED element

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