US4310380A
(en)
*
|
1980-04-07 |
1982-01-12 |
Bell Telephone Laboratories, Incorporated |
Plasma etching of silicon
|
US4353777A
(en)
*
|
1981-04-20 |
1982-10-12 |
Lfe Corporation |
Selective plasma polysilicon etching
|
US4551197A
(en)
*
|
1984-07-26 |
1985-11-05 |
Guilmette Joseph G |
Method and apparatus for the recovery and recycling of condensable gas reactants
|
FR2574816B1
(fr)
*
|
1984-12-14 |
1987-02-20 |
Cogema |
Procede de fabrication de pieces en forme par elimination chimique selective d'un noyau
|
JPS61181131A
(ja)
*
|
1985-02-07 |
1986-08-13 |
Nec Corp |
分子流エツチング方法
|
JPS61270830A
(ja)
*
|
1985-05-24 |
1986-12-01 |
Nec Corp |
表面清浄化方法
|
JPH02187025A
(ja)
*
|
1989-01-13 |
1990-07-23 |
Sanyo Electric Co Ltd |
エッチング方法及びx線リソグラフィ用マスクの製造方法
|
US7830587B2
(en)
*
|
1993-03-17 |
2010-11-09 |
Qualcomm Mems Technologies, Inc. |
Method and device for modulating light with semiconductor substrate
|
US6674562B1
(en)
*
|
1994-05-05 |
2004-01-06 |
Iridigm Display Corporation |
Interferometric modulation of radiation
|
US5384009A
(en)
*
|
1993-06-16 |
1995-01-24 |
Applied Materials, Inc. |
Plasma etching using xenon
|
US7550794B2
(en)
*
|
2002-09-20 |
2009-06-23 |
Idc, Llc |
Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
|
US7839556B2
(en)
*
|
1994-05-05 |
2010-11-23 |
Qualcomm Mems Technologies, Inc. |
Method and device for modulating light
|
US7826120B2
(en)
*
|
1994-05-05 |
2010-11-02 |
Qualcomm Mems Technologies, Inc. |
Method and device for multi-color interferometric modulation
|
US8014059B2
(en)
*
|
1994-05-05 |
2011-09-06 |
Qualcomm Mems Technologies, Inc. |
System and method for charge control in a MEMS device
|
US7808694B2
(en)
*
|
1994-05-05 |
2010-10-05 |
Qualcomm Mems Technologies, Inc. |
Method and device for modulating light
|
US7852545B2
(en)
|
1994-05-05 |
2010-12-14 |
Qualcomm Mems Technologies, Inc. |
Method and device for modulating light
|
US8081369B2
(en)
*
|
1994-05-05 |
2011-12-20 |
Qualcomm Mems Technologies, Inc. |
System and method for a MEMS device
|
JPH07169756A
(ja)
*
|
1994-11-07 |
1995-07-04 |
Semiconductor Energy Lab Co Ltd |
プラズマエッチング方法
|
US7898722B2
(en)
*
|
1995-05-01 |
2011-03-01 |
Qualcomm Mems Technologies, Inc. |
Microelectromechanical device with restoring electrode
|
US6969635B2
(en)
*
|
2000-12-07 |
2005-11-29 |
Reflectivity, Inc. |
Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
|
US6849471B2
(en)
|
2003-03-28 |
2005-02-01 |
Reflectivity, Inc. |
Barrier layers for microelectromechanical systems
|
JPH08306675A
(ja)
*
|
1996-05-13 |
1996-11-22 |
Semiconductor Energy Lab Co Ltd |
プラズマエッチング方法
|
US7929197B2
(en)
*
|
1996-11-05 |
2011-04-19 |
Qualcomm Mems Technologies, Inc. |
System and method for a MEMS device
|
US7830588B2
(en)
*
|
1996-12-19 |
2010-11-09 |
Qualcomm Mems Technologies, Inc. |
Method of making a light modulating display device and associated transistor circuitry and structures thereof
|
GB9709659D0
(en)
*
|
1997-05-13 |
1997-07-02 |
Surface Tech Sys Ltd |
Method and apparatus for etching a workpiece
|
US6228775B1
(en)
|
1998-02-24 |
2001-05-08 |
Micron Technology, Inc. |
Plasma etching method using low ionization potential gas
|
WO1999049506A1
(en)
|
1998-03-20 |
1999-09-30 |
Surface Technology Systems Limited |
Method and apparatus for manufacturing a micromechanical device
|
KR100703140B1
(ko)
*
|
1998-04-08 |
2007-04-05 |
이리다임 디스플레이 코포레이션 |
간섭 변조기 및 그 제조 방법
|
US8928967B2
(en)
|
1998-04-08 |
2015-01-06 |
Qualcomm Mems Technologies, Inc. |
Method and device for modulating light
|
US6203715B1
(en)
*
|
1999-01-19 |
2001-03-20 |
Daewoo Electronics Co., Ltd. |
Method for the manufacture of a thin film actuated mirror array
|
US6942811B2
(en)
*
|
1999-10-26 |
2005-09-13 |
Reflectivity, Inc |
Method for achieving improved selectivity in an etching process
|
US7041224B2
(en)
*
|
1999-10-26 |
2006-05-09 |
Reflectivity, Inc. |
Method for vapor phase etching of silicon
|
US6290864B1
(en)
|
1999-10-26 |
2001-09-18 |
Reflectivity, Inc. |
Fluoride gas etching of silicon with improved selectivity
|
US6960305B2
(en)
*
|
1999-10-26 |
2005-11-01 |
Reflectivity, Inc |
Methods for forming and releasing microelectromechanical structures
|
US6736987B1
(en)
*
|
2000-07-12 |
2004-05-18 |
Techbank Corporation |
Silicon etching apparatus using XeF2
|
US7019376B2
(en)
*
|
2000-08-11 |
2006-03-28 |
Reflectivity, Inc |
Micromirror array device with a small pitch size
|
US6887337B2
(en)
*
|
2000-09-19 |
2005-05-03 |
Xactix, Inc. |
Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto
|
CN1263674C
(zh)
*
|
2001-03-29 |
2006-07-12 |
株式会社丰田中央研究所 |
硅系列构造体的制造装置与制造方法
|
AU2002303842A1
(en)
*
|
2001-05-22 |
2002-12-03 |
Reflectivity, Inc. |
A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
|
US7189332B2
(en)
*
|
2001-09-17 |
2007-03-13 |
Texas Instruments Incorporated |
Apparatus and method for detecting an endpoint in a vapor phase etch
|
US20030073302A1
(en)
*
|
2001-10-12 |
2003-04-17 |
Reflectivity, Inc., A California Corporation |
Methods for formation of air gap interconnects
|
US6835616B1
(en)
|
2002-01-29 |
2004-12-28 |
Cypress Semiconductor Corporation |
Method of forming a floating metal structure in an integrated circuit
|
US7026235B1
(en)
|
2002-02-07 |
2006-04-11 |
Cypress Semiconductor Corporation |
Dual-damascene process and associated floating metal structures
|
US7027200B2
(en)
*
|
2002-03-22 |
2006-04-11 |
Reflectivity, Inc |
Etching method used in fabrications of microstructures
|
US6965468B2
(en)
*
|
2003-07-03 |
2005-11-15 |
Reflectivity, Inc |
Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
|
US7803536B2
(en)
|
2002-09-20 |
2010-09-28 |
Integrated Dna Technologies, Inc. |
Methods of detecting fluorescence with anthraquinone quencher dyes
|
US7781850B2
(en)
|
2002-09-20 |
2010-08-24 |
Qualcomm Mems Technologies, Inc. |
Controlling electromechanical behavior of structures within a microelectromechanical systems device
|
US6913942B2
(en)
|
2003-03-28 |
2005-07-05 |
Reflectvity, Inc |
Sacrificial layers for use in fabrications of microelectromechanical devices
|
US6980347B2
(en)
*
|
2003-07-03 |
2005-12-27 |
Reflectivity, Inc |
Micromirror having reduced space between hinge and mirror plate of the micromirror
|
US7645704B2
(en)
*
|
2003-09-17 |
2010-01-12 |
Texas Instruments Incorporated |
Methods and apparatus of etch process control in fabrications of microstructures
|
EP1855142A3
(en)
*
|
2004-07-29 |
2008-07-30 |
Idc, Llc |
System and method for micro-electromechanical operating of an interferometric modulator
|
US7553684B2
(en)
|
2004-09-27 |
2009-06-30 |
Idc, Llc |
Method of fabricating interferometric devices using lift-off processing techniques
|
TW200628877A
(en)
*
|
2005-02-04 |
2006-08-16 |
Prime View Int Co Ltd |
Method of manufacturing optical interference type color display
|
US7422983B2
(en)
|
2005-02-24 |
2008-09-09 |
International Business Machines Corporation |
Ta-TaN selective removal process for integrated device fabrication
|
EP2495212A3
(en)
*
|
2005-07-22 |
2012-10-31 |
QUALCOMM MEMS Technologies, Inc. |
Mems devices having support structures and methods of fabricating the same
|
WO2007013992A1
(en)
*
|
2005-07-22 |
2007-02-01 |
Qualcomm Incorporated |
Support structure for mems device and methods therefor
|
US8278222B2
(en)
|
2005-11-22 |
2012-10-02 |
Air Products And Chemicals, Inc. |
Selective etching and formation of xenon difluoride
|
US7795061B2
(en)
*
|
2005-12-29 |
2010-09-14 |
Qualcomm Mems Technologies, Inc. |
Method of creating MEMS device cavities by a non-etching process
|
US7916980B2
(en)
*
|
2006-01-13 |
2011-03-29 |
Qualcomm Mems Technologies, Inc. |
Interconnect structure for MEMS device
|
US7382515B2
(en)
*
|
2006-01-18 |
2008-06-03 |
Qualcomm Mems Technologies, Inc. |
Silicon-rich silicon nitrides as etch stops in MEMS manufacture
|
US7450295B2
(en)
*
|
2006-03-02 |
2008-11-11 |
Qualcomm Mems Technologies, Inc. |
Methods for producing MEMS with protective coatings using multi-component sacrificial layers
|
US20070249078A1
(en)
*
|
2006-04-19 |
2007-10-25 |
Ming-Hau Tung |
Non-planar surface structures and process for microelectromechanical systems
|
US7763546B2
(en)
*
|
2006-08-02 |
2010-07-27 |
Qualcomm Mems Technologies, Inc. |
Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
|
EP2104948A2
(en)
|
2007-02-20 |
2009-09-30 |
Qualcomm Mems Technologies, Inc. |
Equipment and methods for etching of mems
|
US7733552B2
(en)
*
|
2007-03-21 |
2010-06-08 |
Qualcomm Mems Technologies, Inc |
MEMS cavity-coating layers and methods
|
US7719752B2
(en)
*
|
2007-05-11 |
2010-05-18 |
Qualcomm Mems Technologies, Inc. |
MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
|
WO2009036215A2
(en)
*
|
2007-09-14 |
2009-03-19 |
Qualcomm Mems Technologies, Inc. |
Etching processes used in mems production
|
US7906274B2
(en)
*
|
2007-11-21 |
2011-03-15 |
Molecular Imprints, Inc. |
Method of creating a template employing a lift-off process
|
US7851239B2
(en)
*
|
2008-06-05 |
2010-12-14 |
Qualcomm Mems Technologies, Inc. |
Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
|
US7719754B2
(en)
|
2008-09-30 |
2010-05-18 |
Qualcomm Mems Technologies, Inc. |
Multi-thickness layers for MEMS and mask-saving sequence for same
|
US7864403B2
(en)
*
|
2009-03-27 |
2011-01-04 |
Qualcomm Mems Technologies, Inc. |
Post-release adjustment of interferometric modulator reflectivity
|
US10283321B2
(en)
|
2011-01-18 |
2019-05-07 |
Applied Materials, Inc. |
Semiconductor processing system and methods using capacitively coupled plasma
|
US9132436B2
(en)
|
2012-09-21 |
2015-09-15 |
Applied Materials, Inc. |
Chemical control features in wafer process equipment
|
KR101236367B1
(ko)
*
|
2012-11-13 |
2013-02-22 |
주식회사 진명테크 |
방열효율이 우수한 광대역분배기
|
US10256079B2
(en)
|
2013-02-08 |
2019-04-09 |
Applied Materials, Inc. |
Semiconductor processing systems having multiple plasma configurations
|
US9362130B2
(en)
|
2013-03-01 |
2016-06-07 |
Applied Materials, Inc. |
Enhanced etching processes using remote plasma sources
|
US9309598B2
(en)
|
2014-05-28 |
2016-04-12 |
Applied Materials, Inc. |
Oxide and metal removal
|
US9966240B2
(en)
|
2014-10-14 |
2018-05-08 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning assessment in plasma processing equipment
|
US9355922B2
(en)
|
2014-10-14 |
2016-05-31 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning in plasma processing equipment
|
US10453743B2
(en)
*
|
2014-10-17 |
2019-10-22 |
Acm Research (Shanghai) Inc. |
Barrier layer removal method and semiconductor structure forming method
|
US11637002B2
(en)
|
2014-11-26 |
2023-04-25 |
Applied Materials, Inc. |
Methods and systems to enhance process uniformity
|
US10224210B2
(en)
|
2014-12-09 |
2019-03-05 |
Applied Materials, Inc. |
Plasma processing system with direct outlet toroidal plasma source
|
US10573496B2
(en)
|
2014-12-09 |
2020-02-25 |
Applied Materials, Inc. |
Direct outlet toroidal plasma source
|
US11257693B2
(en)
|
2015-01-09 |
2022-02-22 |
Applied Materials, Inc. |
Methods and systems to improve pedestal temperature control
|
US9728437B2
(en)
|
2015-02-03 |
2017-08-08 |
Applied Materials, Inc. |
High temperature chuck for plasma processing systems
|
US20160225652A1
(en)
|
2015-02-03 |
2016-08-04 |
Applied Materials, Inc. |
Low temperature chuck for plasma processing systems
|
US9691645B2
(en)
|
2015-08-06 |
2017-06-27 |
Applied Materials, Inc. |
Bolted wafer chuck thermal management systems and methods for wafer processing systems
|
US9741593B2
(en)
|
2015-08-06 |
2017-08-22 |
Applied Materials, Inc. |
Thermal management systems and methods for wafer processing systems
|
US9349605B1
(en)
|
2015-08-07 |
2016-05-24 |
Applied Materials, Inc. |
Oxide etch selectivity systems and methods
|
US10504700B2
(en)
|
2015-08-27 |
2019-12-10 |
Applied Materials, Inc. |
Plasma etching systems and methods with secondary plasma injection
|
WO2017189582A1
(en)
|
2016-04-26 |
2017-11-02 |
Active Layer Parametrics, Inc. |
Methods and systems for material property profiling of thin films
|
US11289386B2
(en)
|
2016-04-26 |
2022-03-29 |
Active Layer Parametrics, Inc. |
Methods and apparatus for test pattern forming and film property measurement
|
US10522371B2
(en)
|
2016-05-19 |
2019-12-31 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US10504754B2
(en)
|
2016-05-19 |
2019-12-10 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US10629473B2
(en)
|
2016-09-09 |
2020-04-21 |
Applied Materials, Inc. |
Footing removal for nitride spacer
|
US10062575B2
(en)
|
2016-09-09 |
2018-08-28 |
Applied Materials, Inc. |
Poly directional etch by oxidation
|
US9934942B1
(en)
|
2016-10-04 |
2018-04-03 |
Applied Materials, Inc. |
Chamber with flow-through source
|
US10546729B2
(en)
|
2016-10-04 |
2020-01-28 |
Applied Materials, Inc. |
Dual-channel showerhead with improved profile
|
US10062579B2
(en)
|
2016-10-07 |
2018-08-28 |
Applied Materials, Inc. |
Selective SiN lateral recess
|
US9768034B1
(en)
|
2016-11-11 |
2017-09-19 |
Applied Materials, Inc. |
Removal methods for high aspect ratio structures
|
US10163696B2
(en)
|
2016-11-11 |
2018-12-25 |
Applied Materials, Inc. |
Selective cobalt removal for bottom up gapfill
|
US10242908B2
(en)
|
2016-11-14 |
2019-03-26 |
Applied Materials, Inc. |
Airgap formation with damage-free copper
|
US10026621B2
(en)
|
2016-11-14 |
2018-07-17 |
Applied Materials, Inc. |
SiN spacer profile patterning
|
US10566206B2
(en)
|
2016-12-27 |
2020-02-18 |
Applied Materials, Inc. |
Systems and methods for anisotropic material breakthrough
|
US10403507B2
(en)
|
2017-02-03 |
2019-09-03 |
Applied Materials, Inc. |
Shaped etch profile with oxidation
|
US10431429B2
(en)
|
2017-02-03 |
2019-10-01 |
Applied Materials, Inc. |
Systems and methods for radial and azimuthal control of plasma uniformity
|
US10319739B2
(en)
|
2017-02-08 |
2019-06-11 |
Applied Materials, Inc. |
Accommodating imperfectly aligned memory holes
|
US10943834B2
(en)
|
2017-03-13 |
2021-03-09 |
Applied Materials, Inc. |
Replacement contact process
|
US10319649B2
(en)
|
2017-04-11 |
2019-06-11 |
Applied Materials, Inc. |
Optical emission spectroscopy (OES) for remote plasma monitoring
|
US11276590B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Multi-zone semiconductor substrate supports
|
US11276559B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Semiconductor processing chamber for multiple precursor flow
|
US10497579B2
(en)
|
2017-05-31 |
2019-12-03 |
Applied Materials, Inc. |
Water-free etching methods
|
US10920320B2
(en)
|
2017-06-16 |
2021-02-16 |
Applied Materials, Inc. |
Plasma health determination in semiconductor substrate processing reactors
|
US10541246B2
(en)
|
2017-06-26 |
2020-01-21 |
Applied Materials, Inc. |
3D flash memory cells which discourage cross-cell electrical tunneling
|
US10727080B2
(en)
|
2017-07-07 |
2020-07-28 |
Applied Materials, Inc. |
Tantalum-containing material removal
|
US10541184B2
(en)
|
2017-07-11 |
2020-01-21 |
Applied Materials, Inc. |
Optical emission spectroscopic techniques for monitoring etching
|
US10354889B2
(en)
|
2017-07-17 |
2019-07-16 |
Applied Materials, Inc. |
Non-halogen etching of silicon-containing materials
|
US10170336B1
(en)
|
2017-08-04 |
2019-01-01 |
Applied Materials, Inc. |
Methods for anisotropic control of selective silicon removal
|
US10043674B1
(en)
|
2017-08-04 |
2018-08-07 |
Applied Materials, Inc. |
Germanium etching systems and methods
|
US10297458B2
(en)
|
2017-08-07 |
2019-05-21 |
Applied Materials, Inc. |
Process window widening using coated parts in plasma etch processes
|
US10283324B1
(en)
|
2017-10-24 |
2019-05-07 |
Applied Materials, Inc. |
Oxygen treatment for nitride etching
|
US10128086B1
(en)
|
2017-10-24 |
2018-11-13 |
Applied Materials, Inc. |
Silicon pretreatment for nitride removal
|
US10424487B2
(en)
|
2017-10-24 |
2019-09-24 |
Applied Materials, Inc. |
Atomic layer etching processes
|
US10256112B1
(en)
|
2017-12-08 |
2019-04-09 |
Applied Materials, Inc. |
Selective tungsten removal
|
US10903054B2
(en)
|
2017-12-19 |
2021-01-26 |
Applied Materials, Inc. |
Multi-zone gas distribution systems and methods
|
US11328909B2
(en)
|
2017-12-22 |
2022-05-10 |
Applied Materials, Inc. |
Chamber conditioning and removal processes
|
US10854426B2
(en)
|
2018-01-08 |
2020-12-01 |
Applied Materials, Inc. |
Metal recess for semiconductor structures
|
US10964512B2
(en)
|
2018-02-15 |
2021-03-30 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus and methods
|
US10679870B2
(en)
|
2018-02-15 |
2020-06-09 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus
|
TWI766433B
(zh)
|
2018-02-28 |
2022-06-01 |
美商應用材料股份有限公司 |
形成氣隙的系統及方法
|
US10593560B2
(en)
|
2018-03-01 |
2020-03-17 |
Applied Materials, Inc. |
Magnetic induction plasma source for semiconductor processes and equipment
|
US10319600B1
(en)
|
2018-03-12 |
2019-06-11 |
Applied Materials, Inc. |
Thermal silicon etch
|
US10497573B2
(en)
|
2018-03-13 |
2019-12-03 |
Applied Materials, Inc. |
Selective atomic layer etching of semiconductor materials
|
US10573527B2
(en)
|
2018-04-06 |
2020-02-25 |
Applied Materials, Inc. |
Gas-phase selective etching systems and methods
|
US10490406B2
(en)
|
2018-04-10 |
2019-11-26 |
Appled Materials, Inc. |
Systems and methods for material breakthrough
|
US10699879B2
(en)
|
2018-04-17 |
2020-06-30 |
Applied Materials, Inc. |
Two piece electrode assembly with gap for plasma control
|
US10886137B2
(en)
|
2018-04-30 |
2021-01-05 |
Applied Materials, Inc. |
Selective nitride removal
|
US10872778B2
(en)
|
2018-07-06 |
2020-12-22 |
Applied Materials, Inc. |
Systems and methods utilizing solid-phase etchants
|
US10755941B2
(en)
|
2018-07-06 |
2020-08-25 |
Applied Materials, Inc. |
Self-limiting selective etching systems and methods
|
US10672642B2
(en)
|
2018-07-24 |
2020-06-02 |
Applied Materials, Inc. |
Systems and methods for pedestal configuration
|
US11049755B2
(en)
|
2018-09-14 |
2021-06-29 |
Applied Materials, Inc. |
Semiconductor substrate supports with embedded RF shield
|
US10892198B2
(en)
|
2018-09-14 |
2021-01-12 |
Applied Materials, Inc. |
Systems and methods for improved performance in semiconductor processing
|
US11062887B2
(en)
|
2018-09-17 |
2021-07-13 |
Applied Materials, Inc. |
High temperature RF heater pedestals
|
US11417534B2
(en)
|
2018-09-21 |
2022-08-16 |
Applied Materials, Inc. |
Selective material removal
|
US11682560B2
(en)
|
2018-10-11 |
2023-06-20 |
Applied Materials, Inc. |
Systems and methods for hafnium-containing film removal
|
US11121002B2
(en)
|
2018-10-24 |
2021-09-14 |
Applied Materials, Inc. |
Systems and methods for etching metals and metal derivatives
|
US11437242B2
(en)
|
2018-11-27 |
2022-09-06 |
Applied Materials, Inc. |
Selective removal of silicon-containing materials
|
US11721527B2
(en)
|
2019-01-07 |
2023-08-08 |
Applied Materials, Inc. |
Processing chamber mixing systems
|
US10920319B2
(en)
|
2019-01-11 |
2021-02-16 |
Applied Materials, Inc. |
Ceramic showerheads with conductive electrodes
|