JPS5634107B2 - - Google Patents
Info
- Publication number
- JPS5634107B2 JPS5634107B2 JP11304275A JP11304275A JPS5634107B2 JP S5634107 B2 JPS5634107 B2 JP S5634107B2 JP 11304275 A JP11304275 A JP 11304275A JP 11304275 A JP11304275 A JP 11304275A JP S5634107 B2 JPS5634107 B2 JP S5634107B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11304275A JPS5236476A (en) | 1975-09-17 | 1975-09-17 | Non-volatile semiconductor memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11304275A JPS5236476A (en) | 1975-09-17 | 1975-09-17 | Non-volatile semiconductor memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5236476A JPS5236476A (en) | 1977-03-19 |
| JPS5634107B2 true JPS5634107B2 (en) | 1981-08-07 |
Family
ID=14602000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11304275A Granted JPS5236476A (en) | 1975-09-17 | 1975-09-17 | Non-volatile semiconductor memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5236476A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57180181A (en) * | 1981-04-30 | 1982-11-06 | Nec Corp | Mos type semiconductor device and manufacturing method therefor |
| JP2846822B2 (en) * | 1994-11-28 | 1999-01-13 | モトローラ株式会社 | Non-volatile memory having multi-bit-capable cells having two-layer floating gate structure and method of programming the same |
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1975
- 1975-09-17 JP JP11304275A patent/JPS5236476A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5236476A (en) | 1977-03-19 |