JPS5634095B2 - - Google Patents
Info
- Publication number
- JPS5634095B2 JPS5634095B2 JP10044175A JP10044175A JPS5634095B2 JP S5634095 B2 JPS5634095 B2 JP S5634095B2 JP 10044175 A JP10044175 A JP 10044175A JP 10044175 A JP10044175 A JP 10044175A JP S5634095 B2 JPS5634095 B2 JP S5634095B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50100441A JPS5234683A (en) | 1975-08-18 | 1975-08-18 | Mos-type transistor circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50100441A JPS5234683A (en) | 1975-08-18 | 1975-08-18 | Mos-type transistor circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5234683A JPS5234683A (en) | 1977-03-16 |
| JPS5634095B2 true JPS5634095B2 (oth) | 1981-08-07 |
Family
ID=14274010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50100441A Granted JPS5234683A (en) | 1975-08-18 | 1975-08-18 | Mos-type transistor circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5234683A (oth) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004146403A (ja) | 2002-10-21 | 2004-05-20 | Advantest Corp | 伝送回路、ｃｍｏｓ半導体デバイス、及び設計方法 |
-
1975
- 1975-08-18 JP JP50100441A patent/JPS5234683A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5234683A (en) | 1977-03-16 |