JPS5629387B2 - - Google Patents

Info

Publication number
JPS5629387B2
JPS5629387B2 JP4882275A JP4882275A JPS5629387B2 JP S5629387 B2 JPS5629387 B2 JP S5629387B2 JP 4882275 A JP4882275 A JP 4882275A JP 4882275 A JP4882275 A JP 4882275A JP S5629387 B2 JPS5629387 B2 JP S5629387B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4882275A
Other languages
Japanese (ja)
Other versions
JPS51123573A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50048822A priority Critical patent/JPS51123573A/ja
Publication of JPS51123573A publication Critical patent/JPS51123573A/ja
Publication of JPS5629387B2 publication Critical patent/JPS5629387B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors

Landscapes

  • Thyristors (AREA)
JP50048822A 1975-04-22 1975-04-22 Semiconductor switching device Granted JPS51123573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50048822A JPS51123573A (en) 1975-04-22 1975-04-22 Semiconductor switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50048822A JPS51123573A (en) 1975-04-22 1975-04-22 Semiconductor switching device

Publications (2)

Publication Number Publication Date
JPS51123573A JPS51123573A (en) 1976-10-28
JPS5629387B2 true JPS5629387B2 (cs) 1981-07-08

Family

ID=12813903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50048822A Granted JPS51123573A (en) 1975-04-22 1975-04-22 Semiconductor switching device

Country Status (1)

Country Link
JP (1) JPS51123573A (cs)

Also Published As

Publication number Publication date
JPS51123573A (en) 1976-10-28

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