JPS5627480B2 - - Google Patents
Info
- Publication number
- JPS5627480B2 JPS5627480B2 JP8911177A JP8911177A JPS5627480B2 JP S5627480 B2 JPS5627480 B2 JP S5627480B2 JP 8911177 A JP8911177 A JP 8911177A JP 8911177 A JP8911177 A JP 8911177A JP S5627480 B2 JPS5627480 B2 JP S5627480B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8911177A JPS5423467A (en) | 1977-07-25 | 1977-07-25 | Singlecrystal growing method for binary semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8911177A JPS5423467A (en) | 1977-07-25 | 1977-07-25 | Singlecrystal growing method for binary semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5423467A JPS5423467A (en) | 1979-02-22 |
| JPS5627480B2 true JPS5627480B2 (cs) | 1981-06-25 |
Family
ID=13961771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8911177A Granted JPS5423467A (en) | 1977-07-25 | 1977-07-25 | Singlecrystal growing method for binary semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5423467A (cs) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57155383U (cs) * | 1981-03-25 | 1982-09-29 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5427767A (en) * | 1977-08-03 | 1979-03-02 | Fujitsu Ltd | Single crystal growing method of multielement semiconductors |
| JP2002275000A (ja) * | 2001-03-14 | 2002-09-25 | Res Inst Electric Magnetic Alloys | 高平坦性ファセットを有する高品質バルク単結晶の成長法 |
-
1977
- 1977-07-25 JP JP8911177A patent/JPS5423467A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57155383U (cs) * | 1981-03-25 | 1982-09-29 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5423467A (en) | 1979-02-22 |