JPS562627A - Improvement relative to semiconductor device - Google Patents

Improvement relative to semiconductor device

Info

Publication number
JPS562627A
JPS562627A JP7958580A JP7958580A JPS562627A JP S562627 A JPS562627 A JP S562627A JP 7958580 A JP7958580 A JP 7958580A JP 7958580 A JP7958580 A JP 7958580A JP S562627 A JPS562627 A JP S562627A
Authority
JP
Japan
Prior art keywords
semiconductor device
improvement relative
improvement
relative
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7958580A
Other languages
Japanese (ja)
Inventor
Daanarii Jiefurii
Suteiipurusu Kenesu
Jieemusu Sandaasu Iian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SAUNDERS JAN JAMES
Original Assignee
SAUNDERS JAN JAMES
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SAUNDERS JAN JAMES filed Critical SAUNDERS JAN JAMES
Publication of JPS562627A publication Critical patent/JPS562627A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
JP7958580A 1979-06-12 1980-06-12 Improvement relative to semiconductor device Pending JPS562627A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7920387 1979-06-12

Publications (1)

Publication Number Publication Date
JPS562627A true JPS562627A (en) 1981-01-12

Family

ID=10505786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7958580A Pending JPS562627A (en) 1979-06-12 1980-06-12 Improvement relative to semiconductor device

Country Status (4)

Country Link
JP (1) JPS562627A (en)
DE (1) DE3021915A1 (en)
FR (1) FR2458899A1 (en)
NL (1) NL8003336A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3705295A1 (en) * 1987-02-19 1988-09-01 Kernforschungsz Karlsruhe DEVICE FOR DEPTH-DEPENDENT IMPLANTATION OF PARTICLES IN A TARGET

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1334520A (en) * 1970-06-12 1973-10-17 Atomic Energy Authority Uk Formation of electrically insulating layers in semiconducting materials
US3700978A (en) * 1971-03-18 1972-10-24 Bell Telephone Labor Inc Field effect transistors and methods for making field effect transistors
BE791929A (en) * 1971-12-02 1973-03-16 Western Electric Co PROCESS FOR MANUFACTURING INSULATING REGIONS IN A SEMICONDUCTOR BODY
FR2180540A1 (en) * 1972-04-20 1973-11-30 Favennec Pierre N Semiconductor devices prodn - by ion implantation
FR2257998B1 (en) * 1974-01-10 1976-11-26 Commissariat Energie Atomique
GB2014363B (en) * 1978-02-13 1982-06-03 Dearnaley G Semiconductor devices

Also Published As

Publication number Publication date
FR2458899B1 (en) 1984-01-06
DE3021915A1 (en) 1981-01-08
NL8003336A (en) 1980-12-16
FR2458899A1 (en) 1981-01-02

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