JPS5624371B2 - - Google Patents
Info
- Publication number
- JPS5624371B2 JPS5624371B2 JP1796474A JP1796474A JPS5624371B2 JP S5624371 B2 JPS5624371 B2 JP S5624371B2 JP 1796474 A JP1796474 A JP 1796474A JP 1796474 A JP1796474 A JP 1796474A JP S5624371 B2 JPS5624371 B2 JP S5624371B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1796474A JPS5624371B2 (enExample) | 1974-02-13 | 1974-02-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1796474A JPS5624371B2 (enExample) | 1974-02-13 | 1974-02-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50113176A JPS50113176A (enExample) | 1975-09-05 |
| JPS5624371B2 true JPS5624371B2 (enExample) | 1981-06-05 |
Family
ID=11958411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1796474A Expired JPS5624371B2 (enExample) | 1974-02-13 | 1974-02-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5624371B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5724548A (en) * | 1980-07-22 | 1982-02-09 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor device |
| JPS57130448A (en) * | 1981-02-06 | 1982-08-12 | Nec Corp | Manufacture of semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL164424C (nl) * | 1970-06-04 | 1980-12-15 | Philips Nv | Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag. |
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1974
- 1974-02-13 JP JP1796474A patent/JPS5624371B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS50113176A (enExample) | 1975-09-05 |