JPS5620710B2 - - Google Patents
Info
- Publication number
- JPS5620710B2 JPS5620710B2 JP9452073A JP9452073A JPS5620710B2 JP S5620710 B2 JPS5620710 B2 JP S5620710B2 JP 9452073 A JP9452073 A JP 9452073A JP 9452073 A JP9452073 A JP 9452073A JP S5620710 B2 JPS5620710 B2 JP S5620710B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US283684A US3872493A (en) | 1972-08-25 | 1972-08-25 | Selective irradiation of junctioned semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4967581A JPS4967581A (en:Method) | 1974-07-01 |
| JPS5620710B2 true JPS5620710B2 (en:Method) | 1981-05-15 |
Family
ID=23087110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9452073A Expired JPS5620710B2 (en:Method) | 1972-08-25 | 1973-08-24 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3872493A (en:Method) |
| JP (1) | JPS5620710B2 (en:Method) |
| BE (1) | BE803869A (en:Method) |
| CA (1) | CA980462A (en:Method) |
| GB (1) | GB1384224A (en:Method) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1443434A (en) * | 1973-01-22 | 1976-07-21 | Mullard Ltd | Semiconductor devices |
| US4177477A (en) * | 1974-03-11 | 1979-12-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor switching device |
| US4087834A (en) * | 1976-03-22 | 1978-05-02 | General Electric Company | Self-protecting semiconductor device |
| US4130827A (en) * | 1976-12-03 | 1978-12-19 | Bell Telephone Laboratories, Incorporated | Integrated circuit switching network using low substrate leakage current thyristor construction |
| US4240844A (en) * | 1978-12-22 | 1980-12-23 | Westinghouse Electric Corp. | Reducing the switching time of semiconductor devices by neutron irradiation |
| US4311534A (en) * | 1980-06-27 | 1982-01-19 | Westinghouse Electric Corp. | Reducing the reverse recovery charge of thyristors by nuclear irradiation |
| US5284780A (en) * | 1989-09-28 | 1994-02-08 | Siemens Aktiengesellschaft | Method for increasing the electric strength of a multi-layer semiconductor component |
| JPH05160391A (ja) * | 1991-12-02 | 1993-06-25 | Sankooshiya:Kk | サージ防護デバイスの保持電流制御方法 |
| DE4306320B4 (de) * | 1993-03-01 | 2004-08-05 | Infineon Technologies Ag | Verfahren zur Erhöhung der Spannungsfestigkeit eines mehrschichtigen Halbleiterbauelements |
| US7940558B2 (en) * | 2007-12-21 | 2011-05-10 | Qimonda Ag | Integrated circuit comprising a thyristor and method of controlling a memory cell comprising a thyristor |
| JP6950185B2 (ja) * | 2017-01-12 | 2021-10-13 | 三菱電機株式会社 | 高電子移動度トランジスタの製造方法、高電子移動度トランジスタ |
| CN113976484B (zh) * | 2021-12-28 | 2022-03-11 | 南京日托光伏新能源有限公司 | 太阳能电池分档漏电筛选方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE219804C1 (en:Method) * | 1963-07-01 | 1956-04-02 | ||
| US3442722A (en) * | 1964-12-16 | 1969-05-06 | Siemens Ag | Method of making a pnpn thyristor |
| US3422323A (en) * | 1966-03-18 | 1969-01-14 | Mallory & Co Inc P R | Five-layer light-actuated semiconductor device having bevelled sides |
| US3532910A (en) * | 1968-07-29 | 1970-10-06 | Bell Telephone Labor Inc | Increasing the power output of certain diodes |
| US3564357A (en) * | 1969-03-26 | 1971-02-16 | Ckd Praha | Multilayer semiconductor device with reduced surface current |
-
1972
- 1972-08-25 US US283684A patent/US3872493A/en not_active Expired - Lifetime
-
1973
- 1973-08-01 CA CA177,937A patent/CA980462A/en not_active Expired
- 1973-08-15 GB GB3958373A patent/GB1384224A/en not_active Expired
- 1973-08-22 BE BE1005306A patent/BE803869A/xx not_active IP Right Cessation
- 1973-08-24 JP JP9452073A patent/JPS5620710B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA980462A (en) | 1975-12-23 |
| JPS4967581A (en:Method) | 1974-07-01 |
| US3872493A (en) | 1975-03-18 |
| GB1384224A (en) | 1975-02-19 |
| BE803869A (fr) | 1974-02-22 |