JPS5617824B2 - - Google Patents
Info
- Publication number
- JPS5617824B2 JPS5617824B2 JP13225478A JP13225478A JPS5617824B2 JP S5617824 B2 JPS5617824 B2 JP S5617824B2 JP 13225478 A JP13225478 A JP 13225478A JP 13225478 A JP13225478 A JP 13225478A JP S5617824 B2 JPS5617824 B2 JP S5617824B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13225478A JPS5559736A (en) | 1978-10-27 | 1978-10-27 | Substrate body for semiconductor integrated circuit and its preparation |
| GB7934894A GB2038548B (en) | 1978-10-27 | 1979-10-08 | Isolating semiconductor device by porous silicon oxide |
| CA337,192A CA1130014A (en) | 1978-10-27 | 1979-10-09 | Semiconductor devices and method of manufacturing the same |
| NL7907715A NL7907715A (en) | 1978-10-27 | 1979-10-19 | SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING THEM. |
| FR7926657A FR2440080A1 (en) | 1978-10-27 | 1979-10-26 | SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPRISING POROUS SILICON REGIONS MADE BY ANODINATION |
| DE2943435A DE2943435C2 (en) | 1978-10-27 | 1979-10-26 | Semiconductor structure and process for its manufacture |
| US06/329,759 US4393577A (en) | 1978-10-27 | 1981-12-11 | Semiconductor devices and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13225478A JPS5559736A (en) | 1978-10-27 | 1978-10-27 | Substrate body for semiconductor integrated circuit and its preparation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5559736A JPS5559736A (en) | 1980-05-06 |
| JPS5617824B2 true JPS5617824B2 (en) | 1981-04-24 |
Family
ID=15076965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13225478A Granted JPS5559736A (en) | 1978-10-27 | 1978-10-27 | Substrate body for semiconductor integrated circuit and its preparation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5559736A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55162240A (en) * | 1979-06-04 | 1980-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
| JPS55156335A (en) * | 1979-05-24 | 1980-12-05 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
| JPS57107049A (en) * | 1980-12-25 | 1982-07-03 | Seiko Epson Corp | Semiconductor device |
| JP2000307112A (en) | 1999-04-26 | 2000-11-02 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
| KR100466224B1 (en) * | 2001-01-09 | 2005-01-13 | 텔레포스 주식회사 | Fabrication method of base substrate for mounting semiconductor chip |
| US6527474B2 (en) | 2001-04-30 | 2003-03-04 | Stella Corporation | Pavement drain |
| JP4849579B1 (en) * | 2010-08-17 | 2012-01-11 | 有限会社インタードレーン・ジャパン | Mobile underdrain drainage burial equipment |
| US9601624B2 (en) | 2014-12-30 | 2017-03-21 | Globalfoundries Inc | SOI based FINFET with strained source-drain regions |
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1978
- 1978-10-27 JP JP13225478A patent/JPS5559736A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5559736A (en) | 1980-05-06 |