JPS5617754B2 - - Google Patents
Info
- Publication number
- JPS5617754B2 JPS5617754B2 JP2475276A JP2475276A JPS5617754B2 JP S5617754 B2 JPS5617754 B2 JP S5617754B2 JP 2475276 A JP2475276 A JP 2475276A JP 2475276 A JP2475276 A JP 2475276A JP S5617754 B2 JPS5617754 B2 JP S5617754B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2475276A JPS52107736A (en) | 1976-03-08 | 1976-03-08 | Mos random access memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2475276A JPS52107736A (en) | 1976-03-08 | 1976-03-08 | Mos random access memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52107736A JPS52107736A (en) | 1977-09-09 |
| JPS5617754B2 true JPS5617754B2 (en) | 1981-04-24 |
Family
ID=12146863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2475276A Granted JPS52107736A (en) | 1976-03-08 | 1976-03-08 | Mos random access memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS52107736A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5634185A (en) * | 1979-08-27 | 1981-04-06 | Nec Corp | Memory circuit |
| US4750155A (en) * | 1985-09-19 | 1988-06-07 | Xilinx, Incorporated | 5-Transistor memory cell which can be reliably read and written |
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1976
- 1976-03-08 JP JP2475276A patent/JPS52107736A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52107736A (en) | 1977-09-09 |