JPS56141153A - Target for x-ray tube - Google Patents

Target for x-ray tube

Info

Publication number
JPS56141153A
JPS56141153A JP4278080A JP4278080A JPS56141153A JP S56141153 A JPS56141153 A JP S56141153A JP 4278080 A JP4278080 A JP 4278080A JP 4278080 A JP4278080 A JP 4278080A JP S56141153 A JPS56141153 A JP S56141153A
Authority
JP
Japan
Prior art keywords
si3n4
sintered material
tungsten
target
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4278080A
Other languages
Japanese (ja)
Inventor
Hideo Koizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4278080A priority Critical patent/JPS56141153A/en
Publication of JPS56141153A publication Critical patent/JPS56141153A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00X-ray tubes
    • H01J35/02Details
    • H01J35/04Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08Anodes; Anti cathodes
    • H01J35/10Rotary anodes; Arrangements for rotating anodes; Cooling rotary anodes
    • H01J35/108Substrates for and bonding of emissive target, e.g. composite structures

Abstract

PURPOSE:To both increase heat resisting strength of a target and obtain its weight lightness further with large thermal capacity, by providing a focal plane layer consisting of tungsten or tungsten alloy on a base body constituted by a ceramic sintered material. CONSTITUTION:A focal plane layer 2 consisting of tungsten is provided on a base body 1 constituted by a sintered material of ceramic powder like Si3N4. As the ceramic sintered material used herein, there are provided oxynitrides like Si2ON2, SiAlON, carbides like SiC, B4C, TiC, ZrC, oxides like Al2O3, ZrO2, MgAlO2, carbonitride like Si3N4-SiC, glass ceramics of MAS (Mg-Al-Si oxide) system or LAS (Li-Al-Si oxide) system and the like in addition to nitrides like Si3N4, AlN, TiN, ZrN.
JP4278080A 1980-04-03 1980-04-03 Target for x-ray tube Pending JPS56141153A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4278080A JPS56141153A (en) 1980-04-03 1980-04-03 Target for x-ray tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4278080A JPS56141153A (en) 1980-04-03 1980-04-03 Target for x-ray tube

Publications (1)

Publication Number Publication Date
JPS56141153A true JPS56141153A (en) 1981-11-04

Family

ID=12645476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4278080A Pending JPS56141153A (en) 1980-04-03 1980-04-03 Target for x-ray tube

Country Status (1)

Country Link
JP (1) JPS56141153A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58204451A (en) * 1982-05-21 1983-11-29 Seiko Epson Corp X-ray generator
JPS617554A (en) * 1984-06-22 1986-01-14 Hitachi Ltd Rotary target for x-ray tube
JPS6166349A (en) * 1984-09-07 1986-04-05 Hitachi Ltd Rotary anode target for x-ray tube and its manufacturing method
JPS61143929A (en) * 1984-12-13 1986-07-01 コミユレクス・ソシエテ・プール・ラ・コンヴエルシオン・ドウ・ルラニウム・アン・メタル・エ・エクサフルオリユール Rotary positive electrode for x ray tube
EP0186937A2 (en) * 1984-09-29 1986-07-09 Kabushiki Kaisha Toshiba Rotating anode x-ray tube
EP0189297A2 (en) * 1985-01-23 1986-07-30 Kabushiki Kaisha Toshiba X-ray tube devices
JPS61215259A (en) * 1985-03-19 1986-09-25 真空材料株式会社 Manufacture of silicon nitride target for sputtering
FR2593325A1 (en) * 1986-01-21 1987-07-24 Thomson Cgr Graphite rotating anode for X-ray tube
US10032598B2 (en) 2016-07-26 2018-07-24 Neil Dee Olsen X-ray systems and methods including X-ray anodes
US10438768B2 (en) 2016-07-26 2019-10-08 Neil Dee Olsen X-ray systems and methods including X-ray anodes with gradient profiles
US10490385B2 (en) 2016-07-26 2019-11-26 Neil Dee Olsen X-ray systems and methods including X-ray anodes

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58204451A (en) * 1982-05-21 1983-11-29 Seiko Epson Corp X-ray generator
JPS617554A (en) * 1984-06-22 1986-01-14 Hitachi Ltd Rotary target for x-ray tube
JPH0372178B2 (en) * 1984-09-07 1991-11-15 Hitachi Seisakusho Kk
JPS6166349A (en) * 1984-09-07 1986-04-05 Hitachi Ltd Rotary anode target for x-ray tube and its manufacturing method
EP0186937A2 (en) * 1984-09-29 1986-07-09 Kabushiki Kaisha Toshiba Rotating anode x-ray tube
JPS61143929A (en) * 1984-12-13 1986-07-01 コミユレクス・ソシエテ・プール・ラ・コンヴエルシオン・ドウ・ルラニウム・アン・メタル・エ・エクサフルオリユール Rotary positive electrode for x ray tube
JPH023263B2 (en) * 1984-12-13 1990-01-23 Komyurekusu Soc Puuru Ra Konuerushion Do Ruraniumu An Metaru E Ekusafuruoryuuru
EP0189297A2 (en) * 1985-01-23 1986-07-30 Kabushiki Kaisha Toshiba X-ray tube devices
JPS61215259A (en) * 1985-03-19 1986-09-25 真空材料株式会社 Manufacture of silicon nitride target for sputtering
JPH04948B2 (en) * 1985-03-19 1992-01-09 Shinku Zairyo Kk
FR2593325A1 (en) * 1986-01-21 1987-07-24 Thomson Cgr Graphite rotating anode for X-ray tube
US10032598B2 (en) 2016-07-26 2018-07-24 Neil Dee Olsen X-ray systems and methods including X-ray anodes
US10438768B2 (en) 2016-07-26 2019-10-08 Neil Dee Olsen X-ray systems and methods including X-ray anodes with gradient profiles
US10490385B2 (en) 2016-07-26 2019-11-26 Neil Dee Olsen X-ray systems and methods including X-ray anodes

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