JPS56141153A - Target for x-ray tube - Google Patents
Target for x-ray tubeInfo
- Publication number
- JPS56141153A JPS56141153A JP4278080A JP4278080A JPS56141153A JP S56141153 A JPS56141153 A JP S56141153A JP 4278080 A JP4278080 A JP 4278080A JP 4278080 A JP4278080 A JP 4278080A JP S56141153 A JPS56141153 A JP S56141153A
- Authority
- JP
- Japan
- Prior art keywords
- si3n4
- sintered material
- tungsten
- target
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/08—Anodes; Anti cathodes
- H01J35/10—Rotary anodes; Arrangements for rotating anodes; Cooling rotary anodes
- H01J35/108—Substrates for and bonding of emissive target, e.g. composite structures
Abstract
PURPOSE:To both increase heat resisting strength of a target and obtain its weight lightness further with large thermal capacity, by providing a focal plane layer consisting of tungsten or tungsten alloy on a base body constituted by a ceramic sintered material. CONSTITUTION:A focal plane layer 2 consisting of tungsten is provided on a base body 1 constituted by a sintered material of ceramic powder like Si3N4. As the ceramic sintered material used herein, there are provided oxynitrides like Si2ON2, SiAlON, carbides like SiC, B4C, TiC, ZrC, oxides like Al2O3, ZrO2, MgAlO2, carbonitride like Si3N4-SiC, glass ceramics of MAS (Mg-Al-Si oxide) system or LAS (Li-Al-Si oxide) system and the like in addition to nitrides like Si3N4, AlN, TiN, ZrN.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4278080A JPS56141153A (en) | 1980-04-03 | 1980-04-03 | Target for x-ray tube |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4278080A JPS56141153A (en) | 1980-04-03 | 1980-04-03 | Target for x-ray tube |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56141153A true JPS56141153A (en) | 1981-11-04 |
Family
ID=12645476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4278080A Pending JPS56141153A (en) | 1980-04-03 | 1980-04-03 | Target for x-ray tube |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56141153A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58204451A (en) * | 1982-05-21 | 1983-11-29 | Seiko Epson Corp | X-ray generator |
JPS617554A (en) * | 1984-06-22 | 1986-01-14 | Hitachi Ltd | Rotary target for x-ray tube |
JPS6166349A (en) * | 1984-09-07 | 1986-04-05 | Hitachi Ltd | Rotary anode target for x-ray tube and its manufacturing method |
JPS61143929A (en) * | 1984-12-13 | 1986-07-01 | コミユレクス・ソシエテ・プール・ラ・コンヴエルシオン・ドウ・ルラニウム・アン・メタル・エ・エクサフルオリユール | Rotary positive electrode for x ray tube |
EP0186937A2 (en) * | 1984-09-29 | 1986-07-09 | Kabushiki Kaisha Toshiba | Rotating anode x-ray tube |
EP0189297A2 (en) * | 1985-01-23 | 1986-07-30 | Kabushiki Kaisha Toshiba | X-ray tube devices |
JPS61215259A (en) * | 1985-03-19 | 1986-09-25 | 真空材料株式会社 | Manufacture of silicon nitride target for sputtering |
FR2593325A1 (en) * | 1986-01-21 | 1987-07-24 | Thomson Cgr | Graphite rotating anode for X-ray tube |
US10032598B2 (en) | 2016-07-26 | 2018-07-24 | Neil Dee Olsen | X-ray systems and methods including X-ray anodes |
US10438768B2 (en) | 2016-07-26 | 2019-10-08 | Neil Dee Olsen | X-ray systems and methods including X-ray anodes with gradient profiles |
US10490385B2 (en) | 2016-07-26 | 2019-11-26 | Neil Dee Olsen | X-ray systems and methods including X-ray anodes |
-
1980
- 1980-04-03 JP JP4278080A patent/JPS56141153A/en active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58204451A (en) * | 1982-05-21 | 1983-11-29 | Seiko Epson Corp | X-ray generator |
JPS617554A (en) * | 1984-06-22 | 1986-01-14 | Hitachi Ltd | Rotary target for x-ray tube |
JPH0372178B2 (en) * | 1984-09-07 | 1991-11-15 | Hitachi Seisakusho Kk | |
JPS6166349A (en) * | 1984-09-07 | 1986-04-05 | Hitachi Ltd | Rotary anode target for x-ray tube and its manufacturing method |
EP0186937A2 (en) * | 1984-09-29 | 1986-07-09 | Kabushiki Kaisha Toshiba | Rotating anode x-ray tube |
JPS61143929A (en) * | 1984-12-13 | 1986-07-01 | コミユレクス・ソシエテ・プール・ラ・コンヴエルシオン・ドウ・ルラニウム・アン・メタル・エ・エクサフルオリユール | Rotary positive electrode for x ray tube |
JPH023263B2 (en) * | 1984-12-13 | 1990-01-23 | Komyurekusu Soc Puuru Ra Konuerushion Do Ruraniumu An Metaru E Ekusafuruoryuuru | |
EP0189297A2 (en) * | 1985-01-23 | 1986-07-30 | Kabushiki Kaisha Toshiba | X-ray tube devices |
JPS61215259A (en) * | 1985-03-19 | 1986-09-25 | 真空材料株式会社 | Manufacture of silicon nitride target for sputtering |
JPH04948B2 (en) * | 1985-03-19 | 1992-01-09 | Shinku Zairyo Kk | |
FR2593325A1 (en) * | 1986-01-21 | 1987-07-24 | Thomson Cgr | Graphite rotating anode for X-ray tube |
US10032598B2 (en) | 2016-07-26 | 2018-07-24 | Neil Dee Olsen | X-ray systems and methods including X-ray anodes |
US10438768B2 (en) | 2016-07-26 | 2019-10-08 | Neil Dee Olsen | X-ray systems and methods including X-ray anodes with gradient profiles |
US10490385B2 (en) | 2016-07-26 | 2019-11-26 | Neil Dee Olsen | X-ray systems and methods including X-ray anodes |
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