JPS56138956A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56138956A
JPS56138956A JP777381A JP777381A JPS56138956A JP S56138956 A JPS56138956 A JP S56138956A JP 777381 A JP777381 A JP 777381A JP 777381 A JP777381 A JP 777381A JP S56138956 A JPS56138956 A JP S56138956A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP777381A
Other languages
English (en)
Inventor
Emu Beru Kenesu
Aaru Torogoro Jiyoo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS56138956A publication Critical patent/JPS56138956A/ja
Pending legal-status Critical Current

Links

Classifications

    • H01L29/808—
    • H01L29/1029—
    • H01L29/1066—

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP777381A 1980-01-21 1981-01-21 Semiconductor device Pending JPS56138956A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/113,853 US4322738A (en) 1980-01-21 1980-01-21 N-Channel JFET device compatible with existing bipolar integrated circuit processing techniques

Publications (1)

Publication Number Publication Date
JPS56138956A true JPS56138956A (en) 1981-10-29

Family

ID=22351912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP777381A Pending JPS56138956A (en) 1980-01-21 1981-01-21 Semiconductor device

Country Status (3)

Country Link
US (1) US4322738A (ja)
EP (1) EP0032700A3 (ja)
JP (1) JPS56138956A (ja)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4407005A (en) * 1980-01-21 1983-09-27 Texas Instruments Incorporated N-Channel JFET device having a buried channel region, and method for making same
CA1155969A (en) * 1980-09-26 1983-10-25 Clement A.T. Salama Field effect transistor device and method of production thereof
US4456918A (en) * 1981-10-06 1984-06-26 Harris Corporation Isolated gate JFET structure
US4495694A (en) * 1981-10-06 1985-01-29 Harris Corporation Method of fabricating an isolated gate JFET
US4729008A (en) * 1982-12-08 1988-03-01 Harris Corporation High voltage IC bipolar transistors operable to BVCBO and method of fabrication
EP0197116B1 (en) * 1984-10-05 1990-08-08 Analog Devices, Inc. Low-leakage jfet
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise
US4737837A (en) * 1985-11-27 1988-04-12 Honeywell Inc. Ring topology for an integrated circuit logic cell
US4808547A (en) * 1986-07-07 1989-02-28 Harris Corporation Method of fabrication of high voltage IC bopolar transistors operable to BVCBO
US5010377A (en) * 1988-03-04 1991-04-23 Harris Corporation Isolated gate MESFET and method of trimming
DE68929433T2 (de) * 1988-06-27 2003-06-26 Texas Instruments Inc., Dallas Verfahren zur Herstellung von JFET-Transistoren und Kondensatoren
US4876579A (en) * 1989-01-26 1989-10-24 Harris Corporation Low top gate resistance JFET structure
US5665569A (en) * 1991-08-22 1997-09-09 Nissin Shokuhin Kabushiki Kaisha HIV immunotherapeutics
US5428233A (en) * 1994-04-04 1995-06-27 Motorola Inc. Voltage controlled resistive device
US5907168A (en) * 1998-01-23 1999-05-25 Tlc Precision Wafer Technology, Inc. Low noise Ge-JFETs
JP4610865B2 (ja) * 2003-05-30 2011-01-12 パナソニック株式会社 半導体装置及びその製造方法
US7312481B2 (en) 2004-10-01 2007-12-25 Texas Instruments Incorporated Reliable high-voltage junction field effect transistor and method of manufacture therefor
US7670890B2 (en) * 2006-07-26 2010-03-02 Texas Instruments Deutschland Gmbh Silicide block isolated junction field effect transistor source, drain and gate
US7615425B2 (en) * 2006-08-15 2009-11-10 Texas Instruments Incorporated Open source/drain junction field effect transistor
JP7034119B2 (ja) * 2019-05-20 2022-03-11 三菱電機株式会社 半導体装置及びその駆動方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54149477A (en) * 1978-05-16 1979-11-22 Matsushita Electric Ind Co Ltd Production of junction type field effect semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413531A (en) * 1966-09-06 1968-11-26 Ion Physics Corp High frequency field effect transistor
US3538399A (en) * 1968-05-15 1970-11-03 Tektronix Inc Pn junction gated field effect transistor having buried layer of low resistivity
GB1471617A (en) * 1973-06-21 1977-04-27 Sony Corp Circuits comprising a semiconductor device
US4181542A (en) * 1976-10-25 1980-01-01 Nippon Gakki Seizo Kabushiki Kaisha Method of manufacturing junction field effect transistors
US4143392A (en) * 1977-08-30 1979-03-06 Signetics Corporation Composite jfet-bipolar structure
JPS553691A (en) * 1978-06-13 1980-01-11 Ibm Integrated circuit having junction field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54149477A (en) * 1978-05-16 1979-11-22 Matsushita Electric Ind Co Ltd Production of junction type field effect semiconductor device

Also Published As

Publication number Publication date
EP0032700A3 (en) 1982-08-04
US4322738A (en) 1982-03-30
EP0032700A2 (en) 1981-07-29

Similar Documents

Publication Publication Date Title
JPS56142667A (en) Semiconductor device
JPS56126961A (en) Semiconductor device
JPS5778168A (en) Semiconductor device
JPS56164577A (en) Semiconductor device
DE3163340D1 (en) Semiconductor device
JPS56105662A (en) Semiconductor device
JPS56114370A (en) Semiconductor device
GB8403595D0 (en) Semiconductor device
JPS56126966A (en) Semiconductor device
EP0055558A3 (en) Semiconductor device
JPS56138956A (en) Semiconductor device
JPS56142668A (en) Semiconductor device
JPS56155567A (en) Semiconductor device
DE3161615D1 (en) Semiconductor device
DE3166929D1 (en) Semiconductor device
JPS5773981A (en) Semiconductor device
GB2089564B (en) Semiconductor device
DE3175373D1 (en) Semiconductor device
JPS57106075A (en) Semiconductor device
EP0048358A3 (en) Semiconductor device
DE3162083D1 (en) Semiconductor device
DE3174500D1 (en) Semiconductor device
DE3174789D1 (en) Semiconductor device
DE3175783D1 (en) Semiconductor device
JPS574158A (en) Semiconductor device