JPS56137680A - Method of forming hole - Google Patents

Method of forming hole

Info

Publication number
JPS56137680A
JPS56137680A JP1446981A JP1446981A JPS56137680A JP S56137680 A JPS56137680 A JP S56137680A JP 1446981 A JP1446981 A JP 1446981A JP 1446981 A JP1446981 A JP 1446981A JP S56137680 A JPS56137680 A JP S56137680A
Authority
JP
Japan
Prior art keywords
forming hole
hole
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1446981A
Other languages
English (en)
Other versions
JPH0137855B2 (ja
Inventor
Gandatsupa Anansa Narashipaa
Shin Baateia Haasaran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS56137680A publication Critical patent/JPS56137680A/ja
Publication of JPH0137855B2 publication Critical patent/JPH0137855B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP1446981A 1980-03-24 1981-02-04 Method of forming hole Granted JPS56137680A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13306980A 1980-03-24 1980-03-24

Publications (2)

Publication Number Publication Date
JPS56137680A true JPS56137680A (en) 1981-10-27
JPH0137855B2 JPH0137855B2 (ja) 1989-08-09

Family

ID=22456869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1446981A Granted JPS56137680A (en) 1980-03-24 1981-02-04 Method of forming hole

Country Status (4)

Country Link
EP (1) EP0036500B1 (ja)
JP (1) JPS56137680A (ja)
CA (1) CA1148274A (ja)
DE (1) DE3160804D1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163445A (ja) * 1984-02-02 1985-08-26 Pioneer Electronic Corp コンタクトホ−ルの形成方法
JPS60163446A (ja) * 1984-02-02 1985-08-26 Pioneer Electronic Corp スル−ホ−ルの形成方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4641420A (en) * 1984-08-30 1987-02-10 At&T Bell Laboratories Metalization process for headless contact using deposited smoothing material
DE3609274A1 (de) * 1986-03-19 1987-09-24 Siemens Ag Verfahren zur herstellung eines selbstjustiert positionierten metallkontaktes
US4707457A (en) * 1986-04-03 1987-11-17 Advanced Micro Devices, Inc. Method for making improved contact for integrated circuit structure
FR2613134B1 (fr) * 1987-03-24 1990-03-09 Labo Electronique Physique Dispositif semiconducteur du type transistor a effet de champ
US5136363A (en) * 1987-10-21 1992-08-04 Kabushiki Kaisha Toshiba Semiconductor device with bump electrode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54161887A (en) * 1978-06-13 1979-12-21 Nippon Telegr & Teleph Corp <Ntt> Schottky diode containing guard ring and its manufacture

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1427942A (en) * 1973-08-08 1976-03-10 Plessey Co Ltd Electrical integrated circuit chips
US4256514A (en) * 1978-11-03 1981-03-17 International Business Machines Corporation Method for forming a narrow dimensioned region on a body

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54161887A (en) * 1978-06-13 1979-12-21 Nippon Telegr & Teleph Corp <Ntt> Schottky diode containing guard ring and its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163445A (ja) * 1984-02-02 1985-08-26 Pioneer Electronic Corp コンタクトホ−ルの形成方法
JPS60163446A (ja) * 1984-02-02 1985-08-26 Pioneer Electronic Corp スル−ホ−ルの形成方法

Also Published As

Publication number Publication date
EP0036500A1 (en) 1981-09-30
CA1148274A (en) 1983-06-14
JPH0137855B2 (ja) 1989-08-09
DE3160804D1 (en) 1983-10-06
EP0036500B1 (en) 1983-08-31

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