JPS561343A - Semiconductor sensor - Google Patents

Semiconductor sensor

Info

Publication number
JPS561343A
JPS561343A JP7743379A JP7743379A JPS561343A JP S561343 A JPS561343 A JP S561343A JP 7743379 A JP7743379 A JP 7743379A JP 7743379 A JP7743379 A JP 7743379A JP S561343 A JPS561343 A JP S561343A
Authority
JP
Japan
Prior art keywords
ultra
film
corpuscular
diffused resistor
semiconductor sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7743379A
Other languages
Japanese (ja)
Inventor
Atsushi Abe
Kuni Ogawa
Masahiro Nishikawa
Satoshi Sekido
Shigeru Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7743379A priority Critical patent/JPS561343A/en
Publication of JPS561343A publication Critical patent/JPS561343A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To improve the sensitivity or the like of a semiconductor sensor by providing an ultra-corpuscular film and a heating means for it.
CONSTITUTION: An ultra-corpuscular film 7' of tin oxide is provided on a gate oxide 6 of a transistor 11, and a diffused resistor 4 for heating the ultra-corpuscular film 7' is provided in a silicon substrate 1 as near to the film 7' as possible. A voltage is applied across electrodes 4' and 4" to make the diffused resistor 4 hot in order to heat the ultra-corpuscular film 7'. Thus, the ultra-corpuscular film 7' can be efficiently heated, and using ultra-corpuscles permits the device to highly sensitively react to gases and steam, so that the sensitivity can be improved. Noreover, since a diffused resistor 5 for measuring the temperature can be arranged near the ultra- corpuscular film 7', its temperature can be accurately measured.
COPYRIGHT: (C)1981,JPO&Japio
JP7743379A 1979-06-18 1979-06-18 Semiconductor sensor Pending JPS561343A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7743379A JPS561343A (en) 1979-06-18 1979-06-18 Semiconductor sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7743379A JPS561343A (en) 1979-06-18 1979-06-18 Semiconductor sensor

Publications (1)

Publication Number Publication Date
JPS561343A true JPS561343A (en) 1981-01-09

Family

ID=13633866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7743379A Pending JPS561343A (en) 1979-06-18 1979-06-18 Semiconductor sensor

Country Status (1)

Country Link
JP (1) JPS561343A (en)

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