JPS56130891A - Write-in device for programmable read only memory - Google Patents

Write-in device for programmable read only memory

Info

Publication number
JPS56130891A
JPS56130891A JP3196980A JP3196980A JPS56130891A JP S56130891 A JPS56130891 A JP S56130891A JP 3196980 A JP3196980 A JP 3196980A JP 3196980 A JP3196980 A JP 3196980A JP S56130891 A JPS56130891 A JP S56130891A
Authority
JP
Japan
Prior art keywords
write
voltage
good
address
rewrite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3196980A
Other languages
Japanese (ja)
Inventor
Mikio Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3196980A priority Critical patent/JPS56130891A/en
Publication of JPS56130891A publication Critical patent/JPS56130891A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To avoid the application of high voltage, to prevent the destruction of PROM and mis-write-in and to achieve stable write-in, by setting the write-in voltage to a lower voltage than the rating, and making rewrite-in through the judgement of propriety and gradual increase of write-in voltage if defective. CONSTITUTION:The write-in power supply voltage is set to a lower voltage, e.g., 23 volts than the center value of the rating, and the write-in time per one address is set to a given value, and write-in is sequentially made from the head address. The content is checked for readout and if good, the write-in is stopped, and if not good, the write-in voltage is incremented by 0.5V and rewrite-in is made until it is good. If still defective at the maximum voltage of 26V, the write-in is stopped. This process is made to all the addresses by advancing the address, the application of high voltage can be avoided, the destruction and mis-write-in of PROM can be avoided for stable write-in.
JP3196980A 1980-03-13 1980-03-13 Write-in device for programmable read only memory Pending JPS56130891A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3196980A JPS56130891A (en) 1980-03-13 1980-03-13 Write-in device for programmable read only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3196980A JPS56130891A (en) 1980-03-13 1980-03-13 Write-in device for programmable read only memory

Publications (1)

Publication Number Publication Date
JPS56130891A true JPS56130891A (en) 1981-10-14

Family

ID=12345774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3196980A Pending JPS56130891A (en) 1980-03-13 1980-03-13 Write-in device for programmable read only memory

Country Status (1)

Country Link
JP (1) JPS56130891A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6243898A (en) * 1985-08-21 1987-02-25 Toshiba Corp Nonvolatile semiconductor storage device
JPS6246496A (en) * 1985-08-23 1987-02-28 Sony Corp Writing method for fixed memory device
JPH01151099A (en) * 1987-11-12 1989-06-13 Motorola Inc One-time programmable memory device
US5579260A (en) * 1993-08-27 1996-11-26 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US6091639A (en) * 1993-08-27 2000-07-18 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6243898A (en) * 1985-08-21 1987-02-25 Toshiba Corp Nonvolatile semiconductor storage device
JPS6246496A (en) * 1985-08-23 1987-02-28 Sony Corp Writing method for fixed memory device
JPH01151099A (en) * 1987-11-12 1989-06-13 Motorola Inc One-time programmable memory device
US5579260A (en) * 1993-08-27 1996-11-26 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US5923588A (en) * 1993-08-27 1999-07-13 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device with a plurality of programming voltage levels
US6091639A (en) * 1993-08-27 2000-07-18 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US6169690B1 (en) 1993-08-27 2001-01-02 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US6304489B1 (en) 1993-08-27 2001-10-16 Hiroshi Iwahashi Non-volatile semiconductor memory device and data programming method
US6344999B1 (en) 1993-08-27 2002-02-05 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US6353557B2 (en) 1993-08-27 2002-03-05 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US6738293B1 (en) 1993-08-27 2004-05-18 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US6785166B2 (en) 1993-08-27 2004-08-31 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US7064979B2 (en) 1993-08-27 2006-06-20 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US7319614B2 (en) 1993-08-27 2008-01-15 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method

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