JPS56127773A - Etching device - Google Patents

Etching device

Info

Publication number
JPS56127773A
JPS56127773A JP3036580A JP3036580A JPS56127773A JP S56127773 A JPS56127773 A JP S56127773A JP 3036580 A JP3036580 A JP 3036580A JP 3036580 A JP3036580 A JP 3036580A JP S56127773 A JPS56127773 A JP S56127773A
Authority
JP
Japan
Prior art keywords
etching
voltage
current
finish
moment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3036580A
Other languages
Japanese (ja)
Inventor
Masaaki Takahashi
Yutaka Misawa
Komei Yatsuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3036580A priority Critical patent/JPS56127773A/en
Publication of JPS56127773A publication Critical patent/JPS56127773A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To form a groove at a high reproducibility by providing a finish-point detector which supplies a constant voltage or a constant current between a monitoring body and a counter electrode and detects the finish point of the etching as the moment when the monitoring body is removed by etching to cause a change in the voltage or current. CONSTITUTION:The counter electrode 21 and the monitoring body 22 are placed in an etching solution 23, DC voltage or DC current is supplied between the electrode 21 and the body 22 and is monitored by a voltmeter V or an ammeter A. In this case, the finish point of the etching is detected as the moment when the body 22 is removed by etching to cause an abrupt change in the voltage or the current.
JP3036580A 1980-03-12 1980-03-12 Etching device Pending JPS56127773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3036580A JPS56127773A (en) 1980-03-12 1980-03-12 Etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3036580A JPS56127773A (en) 1980-03-12 1980-03-12 Etching device

Publications (1)

Publication Number Publication Date
JPS56127773A true JPS56127773A (en) 1981-10-06

Family

ID=12301832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3036580A Pending JPS56127773A (en) 1980-03-12 1980-03-12 Etching device

Country Status (1)

Country Link
JP (1) JPS56127773A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141531A (en) * 1982-02-18 1983-08-22 Toshiba Corp Semiconductor element metal thin film etching apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141531A (en) * 1982-02-18 1983-08-22 Toshiba Corp Semiconductor element metal thin film etching apparatus
JPH0316776B2 (en) * 1982-02-18 1991-03-06 Tokyo Shibaura Electric Co

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