JPS56116631A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56116631A
JPS56116631A JP1914380A JP1914380A JPS56116631A JP S56116631 A JPS56116631 A JP S56116631A JP 1914380 A JP1914380 A JP 1914380A JP 1914380 A JP1914380 A JP 1914380A JP S56116631 A JPS56116631 A JP S56116631A
Authority
JP
Japan
Prior art keywords
glass material
thermo
sio2
sic
circuit element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1914380A
Other languages
Japanese (ja)
Inventor
Yasutoshi Kurihara
Komei Irino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1914380A priority Critical patent/JPS56116631A/en
Publication of JPS56116631A publication Critical patent/JPS56116631A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector

Abstract

PURPOSE:To prevent the interference of an electromagnetic wave in a circuit element by a construction wherein an insulated board covered with SiO2 is put in between the circuit element and a support on the surface of a glass material in which SiC powder has been dispersed. CONSTITUTION:A glass material is used to electrically insulate an Si circuit element 13 and a copper support 11. On the other hand, since SiC powder with a thermo- conduction rate of 0.18cal/cm.s. deg.C offers excellent thermo-conductivity, it supplements the radiation of the glass material. The thermo-expansion factor of the material is 4X10<-6>/ deg.C, which is quite near that of Si, so that it is possible to make the thermo-expansion factor of the glass material close to that of an Si semiconductor. Furthermore, since SiC itself has excellent mechanical strength, it maintaine the solidity of the glass material. Thus, using a board 12 in which SiC has been dispersed in glass of ZnO-ObO-SiO2-B2O3 series 23 and coated with SiO2, an Si element 13 is made to adhere to a support 11. By so doing, they can be combined together without impairing their insulation, radiation, heat and fatigue resistance.
JP1914380A 1980-02-20 1980-02-20 Semiconductor device Pending JPS56116631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1914380A JPS56116631A (en) 1980-02-20 1980-02-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1914380A JPS56116631A (en) 1980-02-20 1980-02-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56116631A true JPS56116631A (en) 1981-09-12

Family

ID=11991221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1914380A Pending JPS56116631A (en) 1980-02-20 1980-02-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56116631A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007158156A (en) * 2005-12-07 2007-06-21 Mitsubishi Electric Corp Semiconductor module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007158156A (en) * 2005-12-07 2007-06-21 Mitsubishi Electric Corp Semiconductor module
JP4549287B2 (en) * 2005-12-07 2010-09-22 三菱電機株式会社 Semiconductor module

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