JPS558593B2 - - Google Patents
Info
- Publication number
- JPS558593B2 JPS558593B2 JP3286578A JP3286578A JPS558593B2 JP S558593 B2 JPS558593 B2 JP S558593B2 JP 3286578 A JP3286578 A JP 3286578A JP 3286578 A JP3286578 A JP 3286578A JP S558593 B2 JPS558593 B2 JP S558593B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3286578A JPS54125144A (en) | 1978-03-24 | 1978-03-24 | Treating device using hydrogen fluoride-containing gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3286578A JPS54125144A (en) | 1978-03-24 | 1978-03-24 | Treating device using hydrogen fluoride-containing gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54125144A JPS54125144A (en) | 1979-09-28 |
| JPS558593B2 true JPS558593B2 (enExample) | 1980-03-05 |
Family
ID=12370739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3286578A Granted JPS54125144A (en) | 1978-03-24 | 1978-03-24 | Treating device using hydrogen fluoride-containing gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54125144A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5954227A (ja) * | 1982-09-21 | 1984-03-29 | Tokyo Denshi Kagaku Kabushiki | 乾式パタ−ン形成方法 |
| JPS59166675A (ja) * | 1983-03-11 | 1984-09-20 | Fujitsu Ltd | エツチング装置 |
| JPH03107479A (ja) * | 1989-09-22 | 1991-05-07 | Nec Corp | ドライエッチング装置 |
| KR930005440B1 (ko) * | 1989-10-02 | 1993-06-21 | 다이닛뽕 스쿠린 세이소오 가부시키가이샤 | 절연막의 선택적 제거방법 |
| JPH07169756A (ja) * | 1994-11-07 | 1995-07-04 | Semiconductor Energy Lab Co Ltd | プラズマエッチング方法 |
| JPH08306675A (ja) * | 1996-05-13 | 1996-11-22 | Semiconductor Energy Lab Co Ltd | プラズマエッチング方法 |
| KR101874821B1 (ko) * | 2016-04-05 | 2018-07-06 | 주식회사 테스 | 저온 공정을 이용한 실리콘산화막의 선택적 식각 방법 |
| DE102019218727A1 (de) * | 2019-12-03 | 2021-06-10 | Robert Bosch Gmbh | Vorrichtung und verfahren zum bearbeiten mindestens eines halbleiter-substrates |
-
1978
- 1978-03-24 JP JP3286578A patent/JPS54125144A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54125144A (en) | 1979-09-28 |