JPS558159A - Mos transistor circuit - Google Patents

Mos transistor circuit

Info

Publication number
JPS558159A
JPS558159A JP8110478A JP8110478A JPS558159A JP S558159 A JPS558159 A JP S558159A JP 8110478 A JP8110478 A JP 8110478A JP 8110478 A JP8110478 A JP 8110478A JP S558159 A JPS558159 A JP S558159A
Authority
JP
Japan
Prior art keywords
dsatr
gain
size
reduced
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8110478A
Other languages
Japanese (ja)
Inventor
Yasutaka Nakasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP8110478A priority Critical patent/JPS558159A/en
Publication of JPS558159A publication Critical patent/JPS558159A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To realize the increase of the amplification factor, expansion of the frequency band, reduction of the chip size, reduction of the input conversion noise and lowering of the power consumption respectively by using the MOS transistor (DSATr) formed through the double diffusion for the differential amplifier circuit. CONSTITUTION:With use of DSATr to transistor Tr 202 and 203 of the differential amplifier, the Tr size can be reduced even in case the channel length of DSATr is set under 6mum if the gate length is set to more than 6mum and thus with the gain of the low frequency of more than 10. As a result, an extremely high gain is secured with the same size. In addition, the frequency band can be expanded greatly since gm is extremely high, and at the same time the input conversion noise can be reduced greatly. And also the chip size can be reduced as long as the gain is not changed. The same effect can be obtained with use of depression-type MOSTr 501 and 502 without forming the DSATr into the complementary type.
JP8110478A 1978-07-04 1978-07-04 Mos transistor circuit Pending JPS558159A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8110478A JPS558159A (en) 1978-07-04 1978-07-04 Mos transistor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8110478A JPS558159A (en) 1978-07-04 1978-07-04 Mos transistor circuit

Publications (1)

Publication Number Publication Date
JPS558159A true JPS558159A (en) 1980-01-21

Family

ID=13737067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8110478A Pending JPS558159A (en) 1978-07-04 1978-07-04 Mos transistor circuit

Country Status (1)

Country Link
JP (1) JPS558159A (en)

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