JPS558024A - Electronic beam exposure method - Google Patents

Electronic beam exposure method

Info

Publication number
JPS558024A
JPS558024A JP7988578A JP7988578A JPS558024A JP S558024 A JPS558024 A JP S558024A JP 7988578 A JP7988578 A JP 7988578A JP 7988578 A JP7988578 A JP 7988578A JP S558024 A JPS558024 A JP S558024A
Authority
JP
Japan
Prior art keywords
magnetic field
electronic beam
value
deviation
quantized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7988578A
Other languages
English (en)
Inventor
Toshihiko Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7988578A priority Critical patent/JPS558024A/ja
Publication of JPS558024A publication Critical patent/JPS558024A/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP7988578A 1978-06-30 1978-06-30 Electronic beam exposure method Pending JPS558024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7988578A JPS558024A (en) 1978-06-30 1978-06-30 Electronic beam exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7988578A JPS558024A (en) 1978-06-30 1978-06-30 Electronic beam exposure method

Publications (1)

Publication Number Publication Date
JPS558024A true JPS558024A (en) 1980-01-21

Family

ID=13702702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7988578A Pending JPS558024A (en) 1978-06-30 1978-06-30 Electronic beam exposure method

Country Status (1)

Country Link
JP (1) JPS558024A (ja)

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