JPS557946B2 - - Google Patents

Info

Publication number
JPS557946B2
JPS557946B2 JP3871972A JP3871972A JPS557946B2 JP S557946 B2 JPS557946 B2 JP S557946B2 JP 3871972 A JP3871972 A JP 3871972A JP 3871972 A JP3871972 A JP 3871972A JP S557946 B2 JPS557946 B2 JP S557946B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3871972A
Other languages
Japanese (ja)
Other versions
JPS492488A (US07754267-20100713-C00017.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3871972A priority Critical patent/JPS557946B2/ja
Priority to US351175A priority patent/US3877060A/en
Priority to CA169,035A priority patent/CA982702A/en
Priority to GB1869473A priority patent/GB1411669A/en
Priority to NL7305641A priority patent/NL7305641A/xx
Priority to IT49578/73A priority patent/IT980303B/it
Priority to FR7314412A priority patent/FR2181019B1/fr
Priority to DE2320265A priority patent/DE2320265A1/de
Publication of JPS492488A publication Critical patent/JPS492488A/ja
Publication of JPS557946B2 publication Critical patent/JPS557946B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02516—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/059—Germanium on silicon or Ge-Si on III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Light Receiving Elements (AREA)
JP3871972A 1972-04-19 1972-04-19 Expired JPS557946B2 (US07754267-20100713-C00017.png)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP3871972A JPS557946B2 (US07754267-20100713-C00017.png) 1972-04-19 1972-04-19
US351175A US3877060A (en) 1972-04-19 1973-04-17 Semiconductor device having an insulating layer of boron phosphide and method of making the same
CA169,035A CA982702A (en) 1972-04-19 1973-04-18 Semiconductor device having an insulating layer of boron phosphide and method of making the same
GB1869473A GB1411669A (en) 1972-04-19 1973-04-18 Semiconductor devices comprising an epitaxial layer
NL7305641A NL7305641A (US07754267-20100713-C00017.png) 1972-04-19 1973-04-19
IT49578/73A IT980303B (it) 1972-04-19 1973-04-19 Dispositivo semiconduttore avente uno strato isolante di fosfuro di boro e metodo per produrre il medesimo
FR7314412A FR2181019B1 (US07754267-20100713-C00017.png) 1972-04-19 1973-04-19
DE2320265A DE2320265A1 (de) 1972-04-19 1973-04-19 Halbleitervorrichtung und verfahren zu ihrer herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3871972A JPS557946B2 (US07754267-20100713-C00017.png) 1972-04-19 1972-04-19

Publications (2)

Publication Number Publication Date
JPS492488A JPS492488A (US07754267-20100713-C00017.png) 1974-01-10
JPS557946B2 true JPS557946B2 (US07754267-20100713-C00017.png) 1980-02-29

Family

ID=12533119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3871972A Expired JPS557946B2 (US07754267-20100713-C00017.png) 1972-04-19 1972-04-19

Country Status (8)

Country Link
US (1) US3877060A (US07754267-20100713-C00017.png)
JP (1) JPS557946B2 (US07754267-20100713-C00017.png)
CA (1) CA982702A (US07754267-20100713-C00017.png)
DE (1) DE2320265A1 (US07754267-20100713-C00017.png)
FR (1) FR2181019B1 (US07754267-20100713-C00017.png)
GB (1) GB1411669A (US07754267-20100713-C00017.png)
IT (1) IT980303B (US07754267-20100713-C00017.png)
NL (1) NL7305641A (US07754267-20100713-C00017.png)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5184572A (en) * 1975-01-22 1976-07-23 Hitachi Ltd Sosadenshikenbikyo mataha ruijisochi
JPS51132966A (en) * 1975-05-15 1976-11-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
US4214926A (en) * 1976-07-02 1980-07-29 Tdk Electronics Co., Ltd. Method of doping IIb or VIb group elements into a boron phosphide semiconductor
JPS5390943A (en) * 1977-01-20 1978-08-10 Tdk Corp Printing head of heat sesitive system
JPS5527627A (en) * 1978-08-18 1980-02-27 Tdk Corp Electronic device having protective layer
US4293370A (en) * 1979-01-24 1981-10-06 Tdk Electronics Co., Ltd. Method for the epitaxial growth of boron phosphorous semiconductors
JPS5866353A (ja) * 1981-10-15 1983-04-20 Agency Of Ind Science & Technol 半導体装置
JPS58152539A (ja) * 1982-03-03 1983-09-10 株式会社東芝 Ｘ線診断装置
US4577209A (en) * 1982-09-10 1986-03-18 At&T Bell Laboratories Photodiodes having a hole extending therethrough
US4493113A (en) * 1982-09-10 1985-01-08 At&T Bell Laboratories Bidirectional fiber optic transmission systems and photodiodes for use in such systems
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
US4567503A (en) * 1983-06-29 1986-01-28 Stauffer Chemical Company MIS Device employing elemental pnictide or polyphosphide insulating layers
JPS5999754A (ja) * 1982-11-29 1984-06-08 Agency Of Ind Science & Technol 半導体装置
JPS59103248A (ja) * 1982-12-03 1984-06-14 Iwatsu Electric Co Ltd 蓄積タ−ゲツトの製造方法
US4611388A (en) * 1983-04-14 1986-09-16 Allied Corporation Method of forming an indium phosphide-boron phosphide heterojunction bipolar transistor
US5264296A (en) * 1989-12-06 1993-11-23 General Motors Corporation Laser depositon of crystalline boron nitride films
US5227318A (en) * 1989-12-06 1993-07-13 General Motors Corporation Method of making a cubic boron nitride bipolar transistor
US5330611A (en) * 1989-12-06 1994-07-19 General Motors Corporation Cubic boron nitride carbide films
US5232862A (en) * 1990-07-16 1993-08-03 General Motors Corporation Method of fabricating a transistor having a cubic boron nitride layer
US5142350A (en) * 1990-07-16 1992-08-25 General Motors Corporation Transistor having cubic boron nitride layer
US5119111A (en) * 1991-05-22 1992-06-02 Dynamics Research Corporation Edge-type printhead with contact pads
JP2517863B2 (ja) * 1992-02-10 1996-07-24 工業技術院長 半導体装置
US5637513A (en) * 1994-07-08 1997-06-10 Nec Corporation Fabrication method of semiconductor device with SOI structure
US5641691A (en) * 1995-04-03 1997-06-24 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating complementary vertical bipolar junction transistors in silicon-on-sapphire
US6730987B2 (en) * 2001-09-10 2004-05-04 Showa Denko K.K. Compound semiconductor device, production method thereof, light-emitting device and transistor
KR100540730B1 (ko) * 2001-12-14 2006-01-11 쇼와 덴코 가부시키가이샤 인화 붕소계 반도체 소자 및 그 제조 방법
US6774402B2 (en) * 2002-03-12 2004-08-10 Showa Denko Kabushiki Kaisha Pn-juction type compound semiconductor light-emitting device, production method thereof and white light-emitting diode
US7646040B2 (en) * 2002-11-28 2010-01-12 Showa Denko K.K. Boron phosphide-based compound semiconductor device, production method thereof and light emitting diode
KR100802451B1 (ko) * 2004-03-05 2008-02-13 쇼와 덴코 가부시키가이샤 인화 붕소계 반도체 발광 소자
WO2019070723A1 (en) * 2017-10-03 2019-04-11 The Regents Of The University Of California BORON PHOSPHIDE MATERIALS FOR THERMAL MANAGEMENT AND THERMAL DEVICE APPLICATIONS

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210624A (en) * 1961-04-24 1965-10-05 Monsanto Co Article having a silicon carbide substrate with an epitaxial layer of boron phosphide
BE630321A (US07754267-20100713-C00017.png) * 1962-03-29
US3400309A (en) * 1965-10-18 1968-09-03 Ibm Monolithic silicon device containing dielectrically isolatng film of silicon carbide

Also Published As

Publication number Publication date
JPS492488A (US07754267-20100713-C00017.png) 1974-01-10
IT980303B (it) 1974-09-30
CA982702A (en) 1976-01-27
US3877060A (en) 1975-04-08
DE2320265A1 (de) 1973-11-08
GB1411669A (en) 1975-10-29
NL7305641A (US07754267-20100713-C00017.png) 1973-10-23
FR2181019B1 (US07754267-20100713-C00017.png) 1978-01-06
FR2181019A1 (US07754267-20100713-C00017.png) 1973-11-30

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