JPS5577131A - Vapor phase growth of compound semiconductor epitaxial film - Google Patents
Vapor phase growth of compound semiconductor epitaxial filmInfo
- Publication number
- JPS5577131A JPS5577131A JP15074578A JP15074578A JPS5577131A JP S5577131 A JPS5577131 A JP S5577131A JP 15074578 A JP15074578 A JP 15074578A JP 15074578 A JP15074578 A JP 15074578A JP S5577131 A JPS5577131 A JP S5577131A
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- laminated
- supply
- iii
- gradient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15074578A JPS5577131A (en) | 1978-12-06 | 1978-12-06 | Vapor phase growth of compound semiconductor epitaxial film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15074578A JPS5577131A (en) | 1978-12-06 | 1978-12-06 | Vapor phase growth of compound semiconductor epitaxial film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5577131A true JPS5577131A (en) | 1980-06-10 |
Family
ID=15503481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15074578A Pending JPS5577131A (en) | 1978-12-06 | 1978-12-06 | Vapor phase growth of compound semiconductor epitaxial film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5577131A (ja) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57162378A (en) * | 1981-03-30 | 1982-10-06 | Asahi Chem Ind Co Ltd | Novel indium antimony series composite crystal semiconductor |
| JPS61116823A (ja) * | 1984-10-22 | 1986-06-04 | Nec Corp | 結晶成長方法 |
| US4756792A (en) * | 1985-09-09 | 1988-07-12 | Mitsubishi Monsanto Chemical Co., Ltd. | Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film |
| JPH08321626A (ja) * | 1995-04-12 | 1996-12-03 | He Holdings Inc Dba Hughes Electron | 処理許容誤差を大きくできる高電圧の２レベル静電容量バラクタダイオード |
| JP2008010807A (ja) * | 2006-05-30 | 2008-01-17 | Mitsubishi Electric Corp | 半導体積層構造の製造方法 |
| WO2019224966A1 (ja) * | 2018-05-24 | 2019-11-28 | 三菱電機株式会社 | Ｉｉｉ―ｖ族化合物半導体装置の製造方法 |
-
1978
- 1978-12-06 JP JP15074578A patent/JPS5577131A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57162378A (en) * | 1981-03-30 | 1982-10-06 | Asahi Chem Ind Co Ltd | Novel indium antimony series composite crystal semiconductor |
| JPS61116823A (ja) * | 1984-10-22 | 1986-06-04 | Nec Corp | 結晶成長方法 |
| US4756792A (en) * | 1985-09-09 | 1988-07-12 | Mitsubishi Monsanto Chemical Co., Ltd. | Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film |
| JPH08321626A (ja) * | 1995-04-12 | 1996-12-03 | He Holdings Inc Dba Hughes Electron | 処理許容誤差を大きくできる高電圧の２レベル静電容量バラクタダイオード |
| JP2008010807A (ja) * | 2006-05-30 | 2008-01-17 | Mitsubishi Electric Corp | 半導体積層構造の製造方法 |
| WO2019224966A1 (ja) * | 2018-05-24 | 2019-11-28 | 三菱電機株式会社 | Ｉｉｉ―ｖ族化合物半導体装置の製造方法 |
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