Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filedfiledCritical
Priority to JP4384076ApriorityCriticalpatent/JPS52127065A/ja
Publication of JPS52127065ApublicationCriticalpatent/JPS52127065A/ja
Publication of JPS557691B2publicationCriticalpatent/JPS557691B2/ja
C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C16/52—Controlling or regulating the coating process
Landscapes
Chemical & Material Sciences
(AREA)
General Chemical & Material Sciences
(AREA)
Chemical Kinetics & Catalysis
(AREA)
Engineering & Computer Science
(AREA)
Materials Engineering
(AREA)
Mechanical Engineering
(AREA)
Metallurgy
(AREA)
Organic Chemistry
(AREA)
Crystals, And After-Treatments Of Crystals
(AREA)
Chemical Vapour Deposition
(AREA)
JP4384076A1976-04-161976-04-16Gas phase growing method of semiconductor and its device
GrantedJPS52127065A
(en)