JPS557032B1 - - Google Patents
Info
- Publication number
- JPS557032B1 JPS557032B1 JP8101171A JP8101171A JPS557032B1 JP S557032 B1 JPS557032 B1 JP S557032B1 JP 8101171 A JP8101171 A JP 8101171A JP 8101171 A JP8101171 A JP 8101171A JP S557032 B1 JPS557032 B1 JP S557032B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB49051/70A GB1263835A (en) | 1970-10-15 | 1970-10-15 | Improvements in or relating to injection lasers |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS557032B1 true JPS557032B1 (ja) | 1980-02-21 |
Family
ID=10450935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8101171A Pending JPS557032B1 (ja) | 1970-10-15 | 1971-10-15 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3911376A (ja) |
JP (1) | JPS557032B1 (ja) |
AU (1) | AU464701B2 (ja) |
FR (1) | FR2110437B1 (ja) |
GB (1) | GB1263835A (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4016505A (en) * | 1973-03-20 | 1977-04-05 | Matsushita Electronics Corporation | Double heterostructure semiconductor laser |
US4178604A (en) * | 1973-10-05 | 1979-12-11 | Hitachi, Ltd. | Semiconductor laser device |
US3838359A (en) * | 1973-11-23 | 1974-09-24 | Bell Telephone Labor Inc | Gain asymmetry in heterostructure junction lasers operating in a fundamental transverse mode |
US3982207A (en) * | 1975-03-07 | 1976-09-21 | Bell Telephone Laboratories, Incorporated | Quantum effects in heterostructure lasers |
US4023062A (en) * | 1975-09-25 | 1977-05-10 | Rca Corporation | Low beam divergence light emitting diode |
GB1569369A (en) * | 1977-04-01 | 1980-06-11 | Standard Telephones Cables Ltd | Injection lasers |
GB1558642A (en) * | 1977-04-01 | 1980-01-09 | Standard Telephones Cables Ltd | Injection lasers |
USRE33671E (en) * | 1978-04-24 | 1991-08-20 | At&T Bell Laboratories | Method of making high mobility multilayered heterojunction device employing modulated doping |
US4270094A (en) * | 1978-10-13 | 1981-05-26 | University Of Illinois Foundation | Semiconductor light emitting device |
FR2447612A1 (fr) * | 1979-01-26 | 1980-08-22 | Thomson Csf | Composant semi-conducteur a heterojonction |
US4317085A (en) * | 1979-09-12 | 1982-02-23 | Xerox Corporation | Channeled mesa laser |
US4512022A (en) * | 1982-07-13 | 1985-04-16 | At&T Bell Laboratories | Semiconductor laser having graded index waveguide |
JPH0728084B2 (ja) * | 1985-07-26 | 1995-03-29 | ソニー株式会社 | 半導体レーザー |
JP2763008B2 (ja) * | 1988-11-28 | 1998-06-11 | 三菱化学株式会社 | ダブルヘテロ型エピタキシャル・ウエハおよび発光ダイオード |
US5353705A (en) * | 1992-07-20 | 1994-10-11 | Presstek, Inc. | Lithographic printing members having secondary ablation layers for use with laser-discharge imaging apparatus |
USRE35512F1 (en) * | 1992-07-20 | 1998-08-04 | Presstek Inc | Lithographic printing members for use with laser-discharge imaging |
US5351617A (en) * | 1992-07-20 | 1994-10-04 | Presstek, Inc. | Method for laser-discharge imaging a printing plate |
AU674518B2 (en) * | 1992-07-20 | 1997-01-02 | Presstek, Inc. | Lithographic printing plates for use with laser-discharge imaging apparatus |
US5339737B1 (en) * | 1992-07-20 | 1997-06-10 | Presstek Inc | Lithographic printing plates for use with laser-discharge imaging apparatus |
US5379698A (en) * | 1992-07-20 | 1995-01-10 | Presstek, Inc. | Lithographic printing members for use with laser-discharge imaging |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS515554A (ja) * | 1974-07-03 | 1976-01-17 | Fujitsu Ltd |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3691476A (en) * | 1970-12-31 | 1972-09-12 | Bell Telephone Labor Inc | Double heterostructure laser diodes |
-
1970
- 1970-10-15 GB GB49051/70A patent/GB1263835A/en not_active Expired
-
1971
- 1971-09-30 AU AU34079/71A patent/AU464701B2/en not_active Expired
- 1971-10-04 US US186127A patent/US3911376A/en not_active Expired - Lifetime
- 1971-10-13 FR FR7136692A patent/FR2110437B1/fr not_active Expired
- 1971-10-15 JP JP8101171A patent/JPS557032B1/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS515554A (ja) * | 1974-07-03 | 1976-01-17 | Fujitsu Ltd |
Also Published As
Publication number | Publication date |
---|---|
FR2110437A1 (ja) | 1972-06-02 |
FR2110437B1 (ja) | 1975-07-18 |
AU3407971A (en) | 1973-04-05 |
US3911376A (en) | 1975-10-07 |
GB1263835A (en) | 1972-02-16 |
AU464701B2 (en) | 1975-09-04 |