JPS5565473A - Nonvolatile semiconductor memory device - Google Patents
Nonvolatile semiconductor memory deviceInfo
- Publication number
- JPS5565473A JPS5565473A JP13969278A JP13969278A JPS5565473A JP S5565473 A JPS5565473 A JP S5565473A JP 13969278 A JP13969278 A JP 13969278A JP 13969278 A JP13969278 A JP 13969278A JP S5565473 A JPS5565473 A JP S5565473A
- Authority
- JP
- Japan
- Prior art keywords
- film
- interface
- tungsten oxide
- si3n4
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910001930 tungsten oxide Inorganic materials 0.000 abstract 3
- 230000014759 maintenance of location Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To make write and erase feasible at low voltage and also to prolong memory retention period by forming tungsten oxide in molecularity on the interface of SiO2 film and Si3N4 film. CONSTITUTION:Tungsten oxide is chiefly WO2 or WO or a mixture thereof. These are distributed on the interface of SiO2 film 4 and Si3N4 film 5 at 8X10<14>-2X10<16> atoms/cm<3> or so. Tungsten oxide is strong in bonding strength with the films 4, 5, and from raising temperatures of an Si substrate 1 up to 780-820 deg.C at forming the Si3N4 film 5, a better crystallinity is obtainable for SiO2 film 4. A resistivity of the Si3N4 film is thus improved, a stored charge is prevented from leaking to the gate terminal side, thereby prolonging a memory retention period. Further the discharge injected from the substrate 1 is caught at a large unit of the interface of the films 4, 5 and thus prevented from being distributed in the film 5. Write or erase efficiency is therefore improved and a low-voltage high-speed operation is secured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13969278A JPS5565473A (en) | 1978-11-13 | 1978-11-13 | Nonvolatile semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13969278A JPS5565473A (en) | 1978-11-13 | 1978-11-13 | Nonvolatile semiconductor memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5565473A true JPS5565473A (en) | 1980-05-16 |
Family
ID=15251189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13969278A Pending JPS5565473A (en) | 1978-11-13 | 1978-11-13 | Nonvolatile semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5565473A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7053419B1 (en) * | 2000-09-12 | 2006-05-30 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
| US7064355B2 (en) | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
| US7279345B2 (en) | 2000-09-12 | 2007-10-09 | Philips Lumileds Lighting Company, Llc | Method of forming light emitting devices with improved light extraction efficiency |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4733579A (en) * | 1971-03-26 | 1972-11-18 | ||
| JPS4847280A (en) * | 1971-10-15 | 1973-07-05 |
-
1978
- 1978-11-13 JP JP13969278A patent/JPS5565473A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4733579A (en) * | 1971-03-26 | 1972-11-18 | ||
| JPS4847280A (en) * | 1971-10-15 | 1973-07-05 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7053419B1 (en) * | 2000-09-12 | 2006-05-30 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
| US7064355B2 (en) | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
| US7279345B2 (en) | 2000-09-12 | 2007-10-09 | Philips Lumileds Lighting Company, Llc | Method of forming light emitting devices with improved light extraction efficiency |
| US10312422B2 (en) | 2000-09-12 | 2019-06-04 | Lumileds Llc | Light emitting devices with optical elements and bonding layers |
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