JPS5559758A - Substrate voltage generator circuit - Google Patents

Substrate voltage generator circuit

Info

Publication number
JPS5559758A
JPS5559758A JP10416779A JP10416779A JPS5559758A JP S5559758 A JPS5559758 A JP S5559758A JP 10416779 A JP10416779 A JP 10416779A JP 10416779 A JP10416779 A JP 10416779A JP S5559758 A JPS5559758 A JP S5559758A
Authority
JP
Japan
Prior art keywords
voltage generator
generator circuit
substrate voltage
substrate
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10416779A
Other languages
English (en)
Inventor
Ei Guratsudosutain Reo
Dei Rabu Robaato
Shii Maatein Rarii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5559758A publication Critical patent/JPS5559758A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2209/00—Indexing codes relating to order picking devices in General
    • B65G2209/04—Indication location means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
JP10416779A 1978-10-24 1979-08-17 Substrate voltage generator circuit Pending JPS5559758A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/954,946 US4208595A (en) 1978-10-24 1978-10-24 Substrate generator

Publications (1)

Publication Number Publication Date
JPS5559758A true JPS5559758A (en) 1980-05-06

Family

ID=25496148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10416779A Pending JPS5559758A (en) 1978-10-24 1979-08-17 Substrate voltage generator circuit

Country Status (4)

Country Link
US (1) US4208595A (ja)
EP (1) EP0010137B1 (ja)
JP (1) JPS5559758A (ja)
DE (1) DE2961322D1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6328125A (ja) * 1986-07-22 1988-02-05 Matsushita Electric Ind Co Ltd 信号切換装置

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55162257A (en) * 1979-06-05 1980-12-17 Fujitsu Ltd Semiconductor element having substrate bias generator circuit
US4307307A (en) * 1979-08-09 1981-12-22 Parekh Rajesh H Bias control for transistor circuits incorporating substrate bias generators
US4296340A (en) * 1979-08-27 1981-10-20 Intel Corporation Initializing circuit for MOS integrated circuits
JPS5694654A (en) * 1979-12-27 1981-07-31 Toshiba Corp Generating circuit for substrate bias voltage
DE3002894C2 (de) * 1980-01-28 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte Halbleiterschaltung mit Transistoren
US4336466A (en) * 1980-06-30 1982-06-22 Inmos Corporation Substrate bias generator
US4307333A (en) * 1980-07-29 1981-12-22 Sperry Corporation Two way regulating circuit
US4400636A (en) * 1980-12-05 1983-08-23 Ibm Corporation Threshold voltage tolerant logic
US4433253A (en) * 1981-12-10 1984-02-21 Standard Microsystems Corporation Three-phase regulated high-voltage charge pump
US4455493A (en) * 1982-06-30 1984-06-19 Motorola, Inc. Substrate bias pump
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
JPH0750552B2 (ja) * 1985-12-20 1995-05-31 三菱電機株式会社 内部電位発生回路
US4754168A (en) * 1987-01-28 1988-06-28 National Semiconductor Corporation Charge pump circuit for substrate-bias generator
US4933573A (en) * 1987-09-18 1990-06-12 Fuji Electric Co., Ltd. Semiconductor integrated circuit
DE3931596A1 (de) * 1989-03-25 1990-10-04 Eurosil Electronic Gmbh Spannungsvervielfacherschaltung
GB9007791D0 (en) * 1990-04-06 1990-06-06 Foss Richard C High voltage boosted wordline supply charge pump and regulator for dram
US5267201A (en) * 1990-04-06 1993-11-30 Mosaid, Inc. High voltage boosted word line supply charge pump regulator for DRAM
GB9007790D0 (en) * 1990-04-06 1990-06-06 Lines Valerie L Dynamic memory wordline driver scheme
US6424202B1 (en) 1994-02-09 2002-07-23 Lsi Logic Corporation Negative voltage generator for use with N-well CMOS processes
FR2758918B1 (fr) * 1997-01-29 1999-04-09 Sgs Thomson Microelectronics Circuit generateur de potentiel du type pompe de charge
US6369641B1 (en) 2000-09-22 2002-04-09 Infineon Technologies North America Corp. Biasing circuits

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4428584Y1 (ja) * 1964-12-18 1969-11-27

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609414A (en) * 1968-08-20 1971-09-28 Ibm Apparatus for stabilizing field effect transistor thresholds
US3821627A (en) * 1971-07-26 1974-06-28 S Milovancevic D c voltage multipliers and polarity converters
GB1348285A (en) * 1971-07-26 1974-03-13 Integrated Photomatrix Ltd Voltage generator
US3794862A (en) * 1972-04-05 1974-02-26 Rockwell International Corp Substrate bias circuit
US3806741A (en) * 1972-05-17 1974-04-23 Standard Microsyst Smc Self-biasing technique for mos substrate voltage
DE2244988A1 (de) * 1972-09-14 1974-03-21 Dieter Barth Digitalelektronik Geschaltetes netzteil zur erzeugung einer negativen spannung aus einer positiven versorgungsspannung
US4016476A (en) * 1972-09-20 1977-04-05 Citizen Watch Co., Ltd. Booster circuits
CH450474A4 (ja) * 1974-04-01 1976-02-27
GB1504867A (en) * 1974-06-05 1978-03-22 Rca Corp Voltage amplitude multiplying circuits
JPS52128100A (en) * 1976-04-21 1977-10-27 Toshiba Corp Driver circuit
US4049980A (en) * 1976-04-26 1977-09-20 Hewlett-Packard Company IGFET threshold voltage compensator
US4115710A (en) * 1976-12-27 1978-09-19 Texas Instruments Incorporated Substrate bias for MOS integrated circuit
US4142114A (en) * 1977-07-18 1979-02-27 Mostek Corporation Integrated circuit with threshold regulation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4428584Y1 (ja) * 1964-12-18 1969-11-27

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6328125A (ja) * 1986-07-22 1988-02-05 Matsushita Electric Ind Co Ltd 信号切換装置

Also Published As

Publication number Publication date
EP0010137B1 (de) 1981-11-11
EP0010137A1 (de) 1980-04-30
DE2961322D1 (en) 1982-01-14
US4208595A (en) 1980-06-17

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