JPS5553468A - Photo trigger type control rectfier semiconductor device - Google Patents

Photo trigger type control rectfier semiconductor device

Info

Publication number
JPS5553468A
JPS5553468A JP12700478A JP12700478A JPS5553468A JP S5553468 A JPS5553468 A JP S5553468A JP 12700478 A JP12700478 A JP 12700478A JP 12700478 A JP12700478 A JP 12700478A JP S5553468 A JPS5553468 A JP S5553468A
Authority
JP
Japan
Prior art keywords
layer
photo
trigger signal
same time
photo trigger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12700478A
Other languages
Japanese (ja)
Inventor
Tetsuo Yanagiya
Takeomi Takase
Hiroshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12700478A priority Critical patent/JPS5553468A/en
Publication of JPS5553468A publication Critical patent/JPS5553468A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: To improve switching speed and protect from break caused by sudden large current and improve reliability by applying light to a plurality of point at the same time by respective photo trigger signal divided into a plurality.
CONSTITUTION: P-layer 2, N-layer 3, P-layer 5 and N+-layer 5 are stacked and electrodes 6, 7 are attached to the layers 2, 5. A plurality of through hole 8 are mounted on the electrode 7 and a branch 10 of a photofiber 9 is inserted therein. Photo trigger signal divided by the branch into plurality is supplied to the surface of the n+-layer 5 of SCR element at the same time. Accordingly, immeadiately after are energizing current extend in transverse direction at applying part at the same time and extend to whole areas in very short time. Further, when great current is suddely flows, flowing passage becomes plural and so partial temerature raising does not occur and partial heating of the element by photo energy of photo trigger signal does not generate and a device having high reliability is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP12700478A 1978-10-16 1978-10-16 Photo trigger type control rectfier semiconductor device Pending JPS5553468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12700478A JPS5553468A (en) 1978-10-16 1978-10-16 Photo trigger type control rectfier semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12700478A JPS5553468A (en) 1978-10-16 1978-10-16 Photo trigger type control rectfier semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5954681A Division JPS5710264A (en) 1981-04-20 1981-04-20 Light trigger type controlled rectifying semiconductor device

Publications (1)

Publication Number Publication Date
JPS5553468A true JPS5553468A (en) 1980-04-18

Family

ID=14949291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12700478A Pending JPS5553468A (en) 1978-10-16 1978-10-16 Photo trigger type control rectfier semiconductor device

Country Status (1)

Country Link
JP (1) JPS5553468A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201076A (en) * 1981-06-03 1982-12-09 Fuji Electric Corp Res & Dev Ltd Photo-arc thyristor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1254634A (en) * 1968-04-26 1971-11-24 Asea Ab Improved thyristor arrangement
JPS4895196A (en) * 1972-03-16 1973-12-06
JPS48102991A (en) * 1972-04-06 1973-12-24

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1254634A (en) * 1968-04-26 1971-11-24 Asea Ab Improved thyristor arrangement
JPS4895196A (en) * 1972-03-16 1973-12-06
JPS48102991A (en) * 1972-04-06 1973-12-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201076A (en) * 1981-06-03 1982-12-09 Fuji Electric Corp Res & Dev Ltd Photo-arc thyristor

Similar Documents

Publication Publication Date Title
JPS5553468A (en) Photo trigger type control rectfier semiconductor device
JPS5359330A (en) Mis-output preventing system
JPS5286049A (en) Semiconductor switch
JPS5483781A (en) Semiconductor control element
JPS5311590A (en) Semiconductor laser device
JPS5318973A (en) Production of two kinds of schottky barrier diodes
JPS531482A (en) Semiconductor injection type laser
JPS5296341A (en) Current controller
JPS5713762A (en) Light energized semiconductor device
JPS51130169A (en) Semiconductor device
JPS52125265A (en) Semiconductor control unit
JPS52100884A (en) Semiconductor laser device
JPS52133083A (en) Electrodialyzer
JPS5235985A (en) Semiconductor control rectifier
JPS5376763A (en) Semiconductor rectifying device
JPS52105791A (en) Injection type semiconductor light emitting device
JPS5457973A (en) Semiconductor device for switching control
JPS5395589A (en) Semiconductor light amplifying device
JPS52116088A (en) Preparation of semiconductor laser element
JPS54100289A (en) Laser device
JPS5441097A (en) Solid display device
JPS52131481A (en) Manufactuer fo semiconductor device
JPS51139788A (en) Photosemiconductor device
JPS54161546A (en) Partially plating method
JPS52149713A (en) Electric vehicle protection device