JPS55500660A - - Google Patents

Info

Publication number
JPS55500660A
JPS55500660A JP50106479A JP50106479A JPS55500660A JP S55500660 A JPS55500660 A JP S55500660A JP 50106479 A JP50106479 A JP 50106479A JP 50106479 A JP50106479 A JP 50106479A JP S55500660 A JPS55500660 A JP S55500660A
Authority
JP
Japan
Prior art keywords
silicon
aluminum
atoms
vacancies
reconstructed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50106479A
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS55500660A publication Critical patent/JPS55500660A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Catalysts (AREA)
JP50106479A 1978-06-28 1979-06-21 Pending JPS55500660A (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/920,093 US4235662A (en) 1978-06-28 1978-06-28 Layer of crystalline silicon having (111) orientation on (111) surface of lithium aluminum

Publications (1)

Publication Number Publication Date
JPS55500660A true JPS55500660A (cg-RX-API-DMAC7.html) 1980-09-18

Family

ID=25443142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50106479A Pending JPS55500660A (cg-RX-API-DMAC7.html) 1978-06-28 1979-06-21

Country Status (8)

Country Link
US (1) US4235662A (cg-RX-API-DMAC7.html)
EP (1) EP0018397B1 (cg-RX-API-DMAC7.html)
JP (1) JPS55500660A (cg-RX-API-DMAC7.html)
AT (1) ATE3312T1 (cg-RX-API-DMAC7.html)
AU (1) AU535229B2 (cg-RX-API-DMAC7.html)
CA (1) CA1133807A (cg-RX-API-DMAC7.html)
DE (1) DE2965355D1 (cg-RX-API-DMAC7.html)
WO (1) WO1980000126A1 (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5993000A (ja) * 1982-11-17 1984-05-29 Yoshihiro Hamakawa 単結晶薄膜製造用基板
US4797527A (en) * 1985-02-06 1989-01-10 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Electrode for electric discharge machining and method for producing the same
US5310696A (en) * 1989-06-16 1994-05-10 Massachusetts Institute Of Technology Chemical method for the modification of a substrate surface to accomplish heteroepitaxial crystal growth
US5112699A (en) * 1990-03-12 1992-05-12 International Business Machines Corporation Metal-metal epitaxy on substrates and method of making
US5792270A (en) * 1993-10-21 1998-08-11 Saxena; Arjun Apparatus for forming a pattern of nucleation sites
US6482248B1 (en) 2000-11-28 2002-11-19 Magnum Research, Inc. Aluminum composite for gun barrels
US7910992B2 (en) * 2008-07-15 2011-03-22 Maxim Integrated Products, Inc. Vertical MOSFET with through-body via for gate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325392A (en) * 1961-11-29 1967-06-13 Siemens Ag Method of producing monocrystalline layers of silicon on monocrystalline substrates
US3417301A (en) * 1966-09-20 1968-12-17 North American Rockwell Composite heteroepitaxial structure
US3563730A (en) * 1968-11-05 1971-02-16 Lithium Corp Method of preparing alkali metal-containing alloys
US3957532A (en) * 1974-06-20 1976-05-18 The United States Of America As Represented By The United States Energy Research And Development Administration Method of preparing an electrode material of lithium-aluminum alloy
US3990914A (en) * 1974-09-03 1976-11-09 Sensor Technology, Inc. Tubular solar cell
US4011372A (en) * 1975-12-09 1977-03-08 The United States Of America As Represented By The United States Energy Research And Development Administration Method of preparing a negative electrode including lithium alloy for use within a secondary electrochemical cell
US4115625A (en) * 1976-11-01 1978-09-19 Sotec Corporation Sodium thallium type crystal on crystalline layer
US4042447A (en) * 1976-11-01 1977-08-16 Sotec Corporation Crystallizing a layer of silicon on a sodium thallium type crystalline alloy substrate
US4222814A (en) * 1978-01-26 1980-09-16 Sotek Corporation Method for forming a crystalline film for a paramagnetic sodium thallium type intermetallic compound

Also Published As

Publication number Publication date
AU4835179A (en) 1980-01-03
DE2965355D1 (en) 1983-06-16
ATE3312T1 (de) 1983-05-15
EP0018397B1 (en) 1983-05-11
CA1133807A (en) 1982-10-19
EP0018397A4 (en) 1980-10-16
AU535229B2 (en) 1984-03-08
US4235662A (en) 1980-11-25
WO1980000126A1 (en) 1980-02-07
EP0018397A1 (en) 1980-11-12

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