JPS5548448B2 - - Google Patents
Info
- Publication number
- JPS5548448B2 JPS5548448B2 JP301476A JP301476A JPS5548448B2 JP S5548448 B2 JPS5548448 B2 JP S5548448B2 JP 301476 A JP301476 A JP 301476A JP 301476 A JP301476 A JP 301476A JP S5548448 B2 JPS5548448 B2 JP S5548448B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP301476A JPS5286059A (en) | 1976-01-13 | 1976-01-13 | Process for production and apparatus used for process of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP301476A JPS5286059A (en) | 1976-01-13 | 1976-01-13 | Process for production and apparatus used for process of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5286059A JPS5286059A (en) | 1977-07-16 |
| JPS5548448B2 true JPS5548448B2 (enExample) | 1980-12-05 |
Family
ID=11545475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP301476A Granted JPS5286059A (en) | 1976-01-13 | 1976-01-13 | Process for production and apparatus used for process of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5286059A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5423391A (en) * | 1977-07-22 | 1979-02-21 | Nec Corp | Gallium-arsenic semiconductor element |
| JPS55123126A (en) * | 1979-03-15 | 1980-09-22 | Nippon Telegr & Teleph Corp <Ntt> | Method for semiconductor crystal growth |
| JPS5635410A (en) * | 1979-08-31 | 1981-04-08 | Fujitsu Ltd | Method and device for manufacturing semiconductor device |
| JPS57191294A (en) * | 1981-05-22 | 1982-11-25 | Hitachi Ltd | Automatic epitaxial device of liquid phase |
| JPS59103330A (ja) * | 1982-12-06 | 1984-06-14 | Agency Of Ind Science & Technol | 化合物半導体の気相成長装置 |
| JPS6415913A (en) * | 1987-07-09 | 1989-01-19 | Mitsubishi Monsanto Chem | Epitaxial growth method of substrate for high-brightness led |
-
1976
- 1976-01-13 JP JP301476A patent/JPS5286059A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5286059A (en) | 1977-07-16 |