JPS5543631B2 - - Google Patents

Info

Publication number
JPS5543631B2
JPS5543631B2 JP3986875A JP3986875A JPS5543631B2 JP S5543631 B2 JPS5543631 B2 JP S5543631B2 JP 3986875 A JP3986875 A JP 3986875A JP 3986875 A JP3986875 A JP 3986875A JP S5543631 B2 JPS5543631 B2 JP S5543631B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3986875A
Other languages
Japanese (ja)
Other versions
JPS50142174A (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50142174A publication Critical patent/JPS50142174A/ja
Publication of JPS5543631B2 publication Critical patent/JPS5543631B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/919Compensation doping

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP3986875A 1974-05-03 1975-04-03 Expired JPS5543631B2 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US466566A US3912558A (en) 1974-05-03 1974-05-03 Method of MOS circuit fabrication

Publications (2)

Publication Number Publication Date
JPS50142174A JPS50142174A (https=) 1975-11-15
JPS5543631B2 true JPS5543631B2 (https=) 1980-11-07

Family

ID=23852254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3986875A Expired JPS5543631B2 (https=) 1974-05-03 1975-04-03

Country Status (6)

Country Link
US (1) US3912558A (https=)
JP (1) JPS5543631B2 (https=)
CA (1) CA1008973A (https=)
DE (1) DE2516393A1 (https=)
FR (1) FR2269792A1 (https=)
GB (1) GB1494708A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030952A (en) * 1974-04-18 1977-06-21 Fairchild Camera And Instrument Corporation Method of MOS circuit fabrication
US4097314A (en) * 1976-12-30 1978-06-27 Rca Corp. Method of making a sapphire gate transistor
JPS53115173A (en) * 1977-03-18 1978-10-07 Hitachi Ltd Production of semiconductor device
JPS5492175A (en) * 1977-12-29 1979-07-21 Fujitsu Ltd Manufacture of semiconductor device
US4542037A (en) * 1980-04-28 1985-09-17 Fairchild Camera And Instrument Corporation Laser induced flow of glass bonded materials
CA1174285A (en) * 1980-04-28 1984-09-11 Michelangelo Delfino Laser induced flow of integrated circuit structure materials
JP2565317B2 (ja) * 1986-12-03 1996-12-18 富士通株式会社 半導体装置の製造方法
JP3123937B2 (ja) * 1996-11-26 2001-01-15 日本電気株式会社 半導体装置およびその製造方法
EP1215205B1 (en) 2000-12-08 2007-11-21 Sony Deutschland GmbH Tuned multifunctional linker molecules for electronic charge transport through organic-inorganic composite structures and use thereof
US9701629B2 (en) 2000-12-08 2017-07-11 Sony Deutschland Gmbh Use of dithiocarbamate esters and bis-dithiocarbamate esters in the preparation of organic-inorganic nanocomposites

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3476619A (en) * 1966-09-13 1969-11-04 Motorola Inc Semiconductor device stabilization
DE2040180B2 (de) * 1970-01-22 1977-08-25 Intel Corp, Mountain View, Calif. (V.St.A.) Verfahren zur verhinderung von mechanischen bruechen einer duennen, die oberflaeche eines halbleiterkoerpers ueberdeckende isolierschichten ueberziehenden elektrisch leitenden schicht
US3756876A (en) * 1970-10-27 1973-09-04 Cogar Corp Fabrication process for field effect and bipolar transistor devices
JPS4929785B1 (https=) * 1970-10-30 1974-08-07

Also Published As

Publication number Publication date
CA1008973A (en) 1977-04-19
US3912558A (en) 1975-10-14
JPS50142174A (https=) 1975-11-15
FR2269792A1 (https=) 1975-11-28
GB1494708A (en) 1977-12-14
DE2516393A1 (de) 1975-11-13

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