JPS5542398A - Charge transfer dynamic memory cell particularly adapted for shift register - Google Patents
Charge transfer dynamic memory cell particularly adapted for shift registerInfo
- Publication number
- JPS5542398A JPS5542398A JP11867079A JP11867079A JPS5542398A JP S5542398 A JPS5542398 A JP S5542398A JP 11867079 A JP11867079 A JP 11867079A JP 11867079 A JP11867079 A JP 11867079A JP S5542398 A JPS5542398 A JP S5542398A
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- shift register
- charge transfer
- dynamic memory
- particularly adapted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
- H03K23/64—Pulse counters comprising counting chains; Frequency dividers comprising counting chains with a base or radix other than a power of two
- H03K23/66—Pulse counters comprising counting chains; Frequency dividers comprising counting chains with a base or radix other than a power of two with a variable counting base, e.g. by presetting or by adding or suppressing pulses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7826552A FR2436468A1 (fr) | 1978-09-15 | 1978-09-15 | Element de memoire dynamique a transfert de charges, et application notamment a un registre a decalage |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5542398A true JPS5542398A (en) | 1980-03-25 |
Family
ID=9212683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11867079A Pending JPS5542398A (en) | 1978-09-15 | 1979-09-14 | Charge transfer dynamic memory cell particularly adapted for shift register |
Country Status (5)
Country | Link |
---|---|
US (1) | US4264964A (ja) |
EP (1) | EP0009438B1 (ja) |
JP (1) | JPS5542398A (ja) |
DE (1) | DE2966191D1 (ja) |
FR (1) | FR2436468A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0460684A (ja) * | 1990-06-29 | 1992-02-26 | Morita Mfg Co Ltd | 歯科実習机 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8204727A (nl) * | 1982-12-07 | 1984-07-02 | Philips Nv | Ladingsoverdrachtinrichting. |
JPS59162413A (ja) * | 1983-03-07 | 1984-09-13 | Hitachi Ltd | 熱式流量計 |
US7168084B1 (en) | 1992-12-09 | 2007-01-23 | Sedna Patent Services, Llc | Method and apparatus for targeting virtual objects |
US9286294B2 (en) * | 1992-12-09 | 2016-03-15 | Comcast Ip Holdings I, Llc | Video and digital multimedia aggregator content suggestion engine |
US7908628B2 (en) | 2001-08-03 | 2011-03-15 | Comcast Ip Holdings I, Llc | Video and digital multimedia aggregator content coding and formatting |
US7793326B2 (en) | 2001-08-03 | 2010-09-07 | Comcast Ip Holdings I, Llc | Video and digital multimedia aggregator |
US7846760B2 (en) | 2006-05-31 | 2010-12-07 | Kenet, Inc. | Doped plug for CCD gaps |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU461729B2 (en) * | 1971-01-14 | 1975-06-05 | Rca Corporation | Charge coupled circuits |
US3763480A (en) * | 1971-10-12 | 1973-10-02 | Rca Corp | Digital and analog data handling devices |
US3789247A (en) * | 1972-07-03 | 1974-01-29 | Ibm | Dynamically ordered bidirectional shift register having charge coupled devices |
US3877056A (en) * | 1973-01-02 | 1975-04-08 | Texas Instruments Inc | Charge transfer device signal processing system |
US3838438A (en) * | 1973-03-02 | 1974-09-24 | Bell Telephone Labor Inc | Detection, inversion, and regeneration in charge transfer apparatus |
US3908182A (en) * | 1974-05-08 | 1975-09-23 | Westinghouse Electric Corp | Non-volatile memory cell |
US4010485A (en) * | 1974-06-13 | 1977-03-01 | Rca Corporation | Charge-coupled device input circuits |
US4038565A (en) * | 1974-10-03 | 1977-07-26 | Ramasesha Bharat | Frequency divider using a charged coupled device |
US3967254A (en) * | 1974-11-18 | 1976-06-29 | Rca Corporation | Charge transfer memory |
US3986176A (en) * | 1975-06-09 | 1976-10-12 | Rca Corporation | Charge transfer memories |
US3980902A (en) * | 1975-06-30 | 1976-09-14 | Honeywell Information Systems, Inc. | Charge injectors for CCD registers |
US4015247A (en) * | 1975-12-22 | 1977-03-29 | Baker Roger T | Method for operating charge transfer memory cells |
US4103343A (en) * | 1976-07-06 | 1978-07-25 | General Electric Company | Charge transfer apparatus |
-
1978
- 1978-09-15 FR FR7826552A patent/FR2436468A1/fr active Granted
-
1979
- 1979-09-10 DE DE7979400633T patent/DE2966191D1/de not_active Expired
- 1979-09-10 EP EP79400633A patent/EP0009438B1/fr not_active Expired
- 1979-09-14 US US06/075,845 patent/US4264964A/en not_active Expired - Lifetime
- 1979-09-14 JP JP11867079A patent/JPS5542398A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0460684A (ja) * | 1990-06-29 | 1992-02-26 | Morita Mfg Co Ltd | 歯科実習机 |
Also Published As
Publication number | Publication date |
---|---|
US4264964A (en) | 1981-04-28 |
DE2966191D1 (en) | 1983-10-27 |
FR2436468A1 (fr) | 1980-04-11 |
EP0009438B1 (fr) | 1983-09-21 |
EP0009438A1 (fr) | 1980-04-02 |
FR2436468B1 (ja) | 1981-02-27 |
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