JPS5542332A - Memory circuit - Google Patents
Memory circuitInfo
- Publication number
- JPS5542332A JPS5542332A JP11457778A JP11457778A JPS5542332A JP S5542332 A JPS5542332 A JP S5542332A JP 11457778 A JP11457778 A JP 11457778A JP 11457778 A JP11457778 A JP 11457778A JP S5542332 A JPS5542332 A JP S5542332A
- Authority
- JP
- Japan
- Prior art keywords
- trt
- circuit
- memory circuit
- couple
- power consumption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
Landscapes
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53114577A JPS5953637B2 (ja) | 1978-09-20 | 1978-09-20 | 記憶回路 |
US06/070,394 US4287574A (en) | 1978-09-20 | 1979-08-28 | Memory cell with non-volatile memory elements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53114577A JPS5953637B2 (ja) | 1978-09-20 | 1978-09-20 | 記憶回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5542332A true JPS5542332A (en) | 1980-03-25 |
JPS5953637B2 JPS5953637B2 (ja) | 1984-12-26 |
Family
ID=14641312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53114577A Expired JPS5953637B2 (ja) | 1978-09-20 | 1978-09-20 | 記憶回路 |
Country Status (2)
Country | Link |
---|---|
US (1) | US4287574A (ja) |
JP (1) | JPS5953637B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008047274A (ja) * | 2006-07-21 | 2008-02-28 | Genusion:Kk | 不揮発性半導体記憶装置、不揮発性半導体記憶装置の状態決定方法および半導体集積回路装置 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4403306A (en) * | 1980-10-22 | 1983-09-06 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor memory operable as static RAM or EAROM |
JPS62217493A (ja) * | 1986-02-27 | 1987-09-24 | Fujitsu Ltd | 半導体不揮発性記憶装置 |
JPH05325557A (ja) * | 1992-05-26 | 1993-12-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5239503A (en) * | 1992-06-17 | 1993-08-24 | Aptix Corporation | High voltage random-access memory cell incorporating level shifter |
US5315545A (en) * | 1992-06-17 | 1994-05-24 | Aptix Corporation | High-voltage five-transistor static random access memory cell |
US5338963A (en) * | 1993-04-05 | 1994-08-16 | International Business Machines Corporation | Soft error immune CMOS static RAM cell |
JP3285442B2 (ja) * | 1993-12-13 | 2002-05-27 | 株式会社日立製作所 | メモリ装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4095281A (en) * | 1976-03-04 | 1978-06-13 | Rca Corporation | Random access-erasable read only memory cell |
US4091460A (en) * | 1976-10-05 | 1978-05-23 | The United States Of America As Represented By The Secretary Of The Air Force | Quasi static, virtually nonvolatile random access memory cell |
US4132904A (en) * | 1977-07-28 | 1979-01-02 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
-
1978
- 1978-09-20 JP JP53114577A patent/JPS5953637B2/ja not_active Expired
-
1979
- 1979-08-28 US US06/070,394 patent/US4287574A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008047274A (ja) * | 2006-07-21 | 2008-02-28 | Genusion:Kk | 不揮発性半導体記憶装置、不揮発性半導体記憶装置の状態決定方法および半導体集積回路装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS5953637B2 (ja) | 1984-12-26 |
US4287574A (en) | 1981-09-01 |
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