JPS5534518B1 - - Google Patents
Info
- Publication number
- JPS5534518B1 JPS5534518B1 JP6992204A JP9220469A JPS5534518B1 JP S5534518 B1 JPS5534518 B1 JP S5534518B1 JP 6992204 A JP6992204 A JP 6992204A JP 9220469 A JP9220469 A JP 9220469A JP S5534518 B1 JPS5534518 B1 JP S5534518B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
- G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356017—Bistable circuits using additional transistors in the input circuit
- H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
- H03K3/35606—Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356086—Bistable circuits with additional means for controlling the main nodes
- H03K3/356095—Bistable circuits with additional means for controlling the main nodes with synchronous operation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US781527A US3548388A (en) | 1968-12-05 | 1968-12-05 | Storage cell with a charge transfer load including series connected fets |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5534518B1 true JPS5534518B1 (US20100056889A1-20100304-C00004.png) | 1980-09-06 |
Family
ID=25123020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6992204A Pending JPS5534518B1 (US20100056889A1-20100304-C00004.png) | 1968-12-05 | 1969-11-19 |
Country Status (5)
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6193743U (US20100056889A1-20100304-C00004.png) * | 1984-11-26 | 1986-06-17 | ||
JPS61141082U (US20100056889A1-20100304-C00004.png) * | 1985-02-19 | 1986-09-01 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE757117R (fr) * | 1969-10-31 | 1971-03-16 | Centre Electron Horloger | Circuit diviseur de |
US3638204A (en) * | 1969-12-19 | 1972-01-25 | Ibm | Semiconductive cell for a storage having a plurality of simultaneously accessible locations |
US3657560A (en) * | 1970-03-18 | 1972-04-18 | Texas Instruments Inc | Frequency-variable insulated gate field effect resistor |
US3886468A (en) * | 1973-12-20 | 1975-05-27 | Ibm | High gain amplifier |
DE2455178C2 (de) * | 1974-11-21 | 1982-12-23 | Siemens AG, 1000 Berlin und 8000 München | Integrierte, programmierbare Logikanordnung |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3363115A (en) * | 1965-03-29 | 1968-01-09 | Gen Micro Electronics Inc | Integral counting circuit with storage capacitors in the conductive path of steering gate circuits |
-
1968
- 1968-12-05 US US781527A patent/US3548388A/en not_active Expired - Lifetime
-
1969
- 1969-11-03 FR FR6938572A patent/FR2025370A1/fr not_active Withdrawn
- 1969-11-06 GB GB54365/69A patent/GB1253397A/en not_active Expired
- 1969-11-19 JP JP6992204A patent/JPS5534518B1/ja active Pending
- 1969-11-28 DE DE19691959689 patent/DE1959689B2/de not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6193743U (US20100056889A1-20100304-C00004.png) * | 1984-11-26 | 1986-06-17 | ||
JPS61141082U (US20100056889A1-20100304-C00004.png) * | 1985-02-19 | 1986-09-01 |
Also Published As
Publication number | Publication date |
---|---|
DE1959689A1 (de) | 1970-06-18 |
GB1253397A (en) | 1971-11-10 |
FR2025370A1 (US20100056889A1-20100304-C00004.png) | 1970-09-11 |
US3548388A (en) | 1970-12-15 |
DE1959689B2 (de) | 1978-01-05 |