JPS5530294B2 - - Google Patents
Info
- Publication number
- JPS5530294B2 JPS5530294B2 JP11977075A JP11977075A JPS5530294B2 JP S5530294 B2 JPS5530294 B2 JP S5530294B2 JP 11977075 A JP11977075 A JP 11977075A JP 11977075 A JP11977075 A JP 11977075A JP S5530294 B2 JPS5530294 B2 JP S5530294B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Weting (AREA)
- Element Separation (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11977075A JPS5244175A (en) | 1975-10-06 | 1975-10-06 | Method of flat etching of silicon substrate |
| NL7610970A NL7610970A (nl) | 1975-10-06 | 1976-10-04 | Werkwijze voor het vlakmaken van een silicium- substraat door etsen. |
| DE19762644940 DE2644940A1 (de) | 1975-10-06 | 1976-10-05 | Aetzverfahren zum abflachen eines siliciumsubstrats |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11977075A JPS5244175A (en) | 1975-10-06 | 1975-10-06 | Method of flat etching of silicon substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5244175A JPS5244175A (en) | 1977-04-06 |
| JPS5530294B2 true JPS5530294B2 (xx) | 1980-08-09 |
Family
ID=14769758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11977075A Granted JPS5244175A (en) | 1975-10-06 | 1975-10-06 | Method of flat etching of silicon substrate |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5244175A (xx) |
| DE (1) | DE2644940A1 (xx) |
| NL (1) | NL7610970A (xx) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6272974U (xx) * | 1985-10-28 | 1987-05-11 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4187125A (en) * | 1976-12-27 | 1980-02-05 | Raytheon Company | Method for manufacturing semiconductor structures by anisotropic and isotropic etching |
| US4278987A (en) * | 1977-10-17 | 1981-07-14 | Hitachi, Ltd. | Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58148131U (ja) * | 1982-03-30 | 1983-10-05 | 住金鋼材工業株式会社 | ブラケツト式サポ−ト足場 |
-
1975
- 1975-10-06 JP JP11977075A patent/JPS5244175A/ja active Granted
-
1976
- 1976-10-04 NL NL7610970A patent/NL7610970A/xx not_active Application Discontinuation
- 1976-10-05 DE DE19762644940 patent/DE2644940A1/de not_active Ceased
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6272974U (xx) * | 1985-10-28 | 1987-05-11 |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7610970A (nl) | 1977-04-12 |
| DE2644940A1 (de) | 1977-04-28 |
| JPS5244175A (en) | 1977-04-06 |