JPS5529147A - Semiconductor ring laser device - Google Patents

Semiconductor ring laser device

Info

Publication number
JPS5529147A
JPS5529147A JP10233678A JP10233678A JPS5529147A JP S5529147 A JPS5529147 A JP S5529147A JP 10233678 A JP10233678 A JP 10233678A JP 10233678 A JP10233678 A JP 10233678A JP S5529147 A JPS5529147 A JP S5529147A
Authority
JP
Japan
Prior art keywords
resonator
spectrum
combined
resonant
wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10233678A
Other languages
Japanese (ja)
Other versions
JPS5729875B2 (en
Inventor
Hideo Kuwabara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10233678A priority Critical patent/JPS5529147A/en
Publication of JPS5529147A publication Critical patent/JPS5529147A/en
Publication of JPS5729875B2 publication Critical patent/JPS5729875B2/ja
Granted legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To obtain an output if narrow oscillation spectrum and high strength by exciting one of two ring-like resonators combined with each other with respectively different wave lengths.
CONSTITUTION: On an n layer 11 on a p type GaAs 10, resonators 13 and 14 with respectively different wave lengths are formed on the sane surface and combined with each other. Degree of combination is appropriately set by selecting distance between them, thickness of the wave passage and the index of refraction. Excitation is made by providing an electrode 16 on the top surface of the resonator 13 and an opponent electrode on the rear surface of the base plate. Light is emitted in the neighborhood of a pn joint and the resonator 13 generates a resonant spectrum at a cycle if Δλ1, and the resonator 14 which is combined with the resonator 13 generates a resonant spectrum at a cycle of Δλ2. For this reason, of these two resonant spectra, only those whose wave come together on the frequency axis and which are within gain width G of the ring laser are taken out through a wave passage 15 for outout. And therefore, number of oscillation vertical mode becomes within a range of one to several pieces and a large output is obtained because spectrum becomes very narrow and concentrated.
COPYRIGHT: (C)1980,JPO&Japio
JP10233678A 1978-08-24 1978-08-24 Semiconductor ring laser device Granted JPS5529147A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10233678A JPS5529147A (en) 1978-08-24 1978-08-24 Semiconductor ring laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10233678A JPS5529147A (en) 1978-08-24 1978-08-24 Semiconductor ring laser device

Publications (2)

Publication Number Publication Date
JPS5529147A true JPS5529147A (en) 1980-03-01
JPS5729875B2 JPS5729875B2 (en) 1982-06-25

Family

ID=14324662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10233678A Granted JPS5529147A (en) 1978-08-24 1978-08-24 Semiconductor ring laser device

Country Status (1)

Country Link
JP (1) JPS5529147A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938359A (en) * 1982-08-26 1984-03-02 Kubota Ltd Two-phase stainless cast steel
JPS59143050A (en) * 1983-02-03 1984-08-16 Kubota Ltd Two-phase stainless cast steel with high corrosion resistance and toughness
JPS6276585A (en) * 1985-09-28 1987-04-08 Sharp Corp Semiconductor laser element
WO2005096462A1 (en) * 2004-03-31 2005-10-13 Nec Corporation Tunable laser

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123583A (en) * 1975-04-21 1976-10-28 Nippon Telegr & Teleph Corp <Ntt> Photo integrating circuit
JPS51123585A (en) * 1975-04-21 1976-10-28 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123583A (en) * 1975-04-21 1976-10-28 Nippon Telegr & Teleph Corp <Ntt> Photo integrating circuit
JPS51123585A (en) * 1975-04-21 1976-10-28 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938359A (en) * 1982-08-26 1984-03-02 Kubota Ltd Two-phase stainless cast steel
JPS59143050A (en) * 1983-02-03 1984-08-16 Kubota Ltd Two-phase stainless cast steel with high corrosion resistance and toughness
JPS628505B2 (en) * 1983-02-03 1987-02-23 Kubota Ltd
JPS6276585A (en) * 1985-09-28 1987-04-08 Sharp Corp Semiconductor laser element
WO2005096462A1 (en) * 2004-03-31 2005-10-13 Nec Corporation Tunable laser

Also Published As

Publication number Publication date
JPS5729875B2 (en) 1982-06-25

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