JPS5528552B2 - - Google Patents

Info

Publication number
JPS5528552B2
JPS5528552B2 JP13958875A JP13958875A JPS5528552B2 JP S5528552 B2 JPS5528552 B2 JP S5528552B2 JP 13958875 A JP13958875 A JP 13958875A JP 13958875 A JP13958875 A JP 13958875A JP S5528552 B2 JPS5528552 B2 JP S5528552B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13958875A
Other languages
Japanese (ja)
Other versions
JPS5263686A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13958875A priority Critical patent/JPS5263686A/ja
Publication of JPS5263686A publication Critical patent/JPS5263686A/ja
Publication of JPS5528552B2 publication Critical patent/JPS5528552B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7884Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
JP13958875A 1975-11-20 1975-11-20 Non-voltatile semiconductor memory device Granted JPS5263686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13958875A JPS5263686A (en) 1975-11-20 1975-11-20 Non-voltatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13958875A JPS5263686A (en) 1975-11-20 1975-11-20 Non-voltatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5263686A JPS5263686A (en) 1977-05-26
JPS5528552B2 true JPS5528552B2 (US06566495-20030520-M00011.png) 1980-07-29

Family

ID=15248751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13958875A Granted JPS5263686A (en) 1975-11-20 1975-11-20 Non-voltatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5263686A (US06566495-20030520-M00011.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6313082Y2 (US06566495-20030520-M00011.png) * 1980-07-30 1988-04-14

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116670A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
JP2600301B2 (ja) * 1988-06-28 1997-04-16 三菱電機株式会社 半導体記憶装置およびその製造方法
US5293328A (en) * 1992-01-15 1994-03-08 National Semiconductor Corporation Electrically reprogrammable EPROM cell with merged transistor and optiumum area

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6313082Y2 (US06566495-20030520-M00011.png) * 1980-07-30 1988-04-14

Also Published As

Publication number Publication date
JPS5263686A (en) 1977-05-26

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