JPS5528262B2 - - Google Patents

Info

Publication number
JPS5528262B2
JPS5528262B2 JP934075A JP934075A JPS5528262B2 JP S5528262 B2 JPS5528262 B2 JP S5528262B2 JP 934075 A JP934075 A JP 934075A JP 934075 A JP934075 A JP 934075A JP S5528262 B2 JPS5528262 B2 JP S5528262B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP934075A
Other languages
Japanese (ja)
Other versions
JPS50141282A (cg-RX-API-DMAC7.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50141282A publication Critical patent/JPS50141282A/ja
Publication of JPS5528262B2 publication Critical patent/JPS5528262B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/7225—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using acoustic means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
  • Thyristors (AREA)
JP934075A 1974-01-23 1975-01-23 Expired JPS5528262B2 (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US435820A US3872326A (en) 1974-01-23 1974-01-23 Bidirectional semiconductor switch with improved dV/dt capability

Publications (2)

Publication Number Publication Date
JPS50141282A JPS50141282A (cg-RX-API-DMAC7.html) 1975-11-13
JPS5528262B2 true JPS5528262B2 (cg-RX-API-DMAC7.html) 1980-07-26

Family

ID=23729954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP934075A Expired JPS5528262B2 (cg-RX-API-DMAC7.html) 1974-01-23 1975-01-23

Country Status (2)

Country Link
US (1) US3872326A (cg-RX-API-DMAC7.html)
JP (1) JPS5528262B2 (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0038496A1 (de) * 1980-04-21 1981-10-28 Siemens Aktiengesellschaft Zündeinrichtung und Piezo-Zündkoppler mit galvanischer Entkopplung
DE3035503C2 (de) * 1980-09-19 1985-01-03 Siemens AG, 1000 Berlin und 8000 München Piezo-Zündeinrichtung für Thyristoren und Triacs
DE3040916C2 (de) * 1980-10-30 1986-02-06 Siemens AG, 1000 Berlin und 8000 München Piezo-Zündeinrichtung für Thyristoren und Triacs
DE3040530C2 (de) * 1980-10-28 1986-03-06 Siemens AG, 1000 Berlin und 8000 München Piezo-Zündeinrichtung für eine elektronisch anzusteuernde Schalteinrichtung
JPH0767200A (ja) * 1993-08-04 1995-03-10 Motorola Inc 音響的絶縁方法
JP3344888B2 (ja) * 1995-12-28 2002-11-18 日本碍子株式会社 圧電/電歪膜型素子及びその製造方法
US5708354A (en) * 1996-12-18 1998-01-13 Mcdermott Technology, Inc. Portable electromagnetic acoustic transducer pulser controller
AU2003213833A1 (en) 2002-03-11 2003-09-29 Fairchild Semiconductor Corporation Drain activated/deactivated ac coupled bandpass rf switch

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3626309A (en) * 1970-01-12 1971-12-07 Zenith Radio Corp Signal transmission system employing electroacoustic filter

Also Published As

Publication number Publication date
JPS50141282A (cg-RX-API-DMAC7.html) 1975-11-13
US3872326A (en) 1975-03-18

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