JPS5527040B2 - - Google Patents

Info

Publication number
JPS5527040B2
JPS5527040B2 JP12389175A JP12389175A JPS5527040B2 JP S5527040 B2 JPS5527040 B2 JP S5527040B2 JP 12389175 A JP12389175 A JP 12389175A JP 12389175 A JP12389175 A JP 12389175A JP S5527040 B2 JPS5527040 B2 JP S5527040B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12389175A
Other languages
Japanese (ja)
Other versions
JPS5164482A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5164482A publication Critical patent/JPS5164482A/en
Publication of JPS5527040B2 publication Critical patent/JPS5527040B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP12389175A 1974-10-16 1975-10-16 Ketsushokeiseihoho oyobisochi Granted JPS5164482A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4479274A GB1524521A (en) 1974-10-16 1974-10-16 Growing of crystals

Publications (2)

Publication Number Publication Date
JPS5164482A JPS5164482A (en) 1976-06-03
JPS5527040B2 true JPS5527040B2 (en) 1980-07-17

Family

ID=10434765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12389175A Granted JPS5164482A (en) 1974-10-16 1975-10-16 Ketsushokeiseihoho oyobisochi

Country Status (5)

Country Link
JP (1) JPS5164482A (en)
CH (1) CH613637A5 (en)
DE (1) DE2546246C2 (en)
GB (1) GB1524521A (en)
IT (1) IT1044681B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1577413A (en) * 1976-03-17 1980-10-22 Metals Research Ltd Growth of crystalline material
JPS5418816A (en) * 1977-07-14 1979-02-13 Tokyo Shibaura Electric Co Sintered members having good corrosionn resistance to gallium phosphide and gallium arsenide
DE2830695C3 (en) * 1977-07-14 1982-05-13 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Apparatus for pulling a III / V compound single crystal from a melt
FR2509637A1 (en) * 1981-07-17 1983-01-21 Commissariat Energie Atomique METHOD OF SUSTAINING, POSITIONING AND CONTACTLESS MOLDING LIQUID MASSES FOR FORMING SOLIDIFICATION OF MATERIALS AND APPLYING SAID METHOD TO SHAPING MICROGRAVITE MATERIALS
US4539173A (en) * 1983-03-17 1985-09-03 Commissariat A L'energie Atomique Process for preparing plates of a metallic or semimetallic material from a liquid mass
US4605468A (en) * 1984-07-10 1986-08-12 Hughes Aircraft Company Shaped crystal fiber growth method
US5078830A (en) * 1989-04-10 1992-01-07 Mitsubishi Metal Corporation Method for growing single crystal
FR2742366B1 (en) * 1995-12-19 1998-01-09 Commissariat Energie Atomique PROCESS AND INSTALLATION FOR SUSTAINING A LIQUID MASS BY A GAS LAYER
CN112663140B (en) * 2020-12-07 2023-01-03 山东大学 Mold device for preparing quaternary halide crystal and preparation method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49107986A (en) * 1973-02-19 1974-10-14

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1286510B (en) * 1962-11-23 1969-01-09 Siemens Ag Process for the production of band-shaped single crystals consisting of semiconductor material by pulling from a melt
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
DE2007200A1 (en) * 1970-02-17 1971-08-26 Siemens Ag Semiconductor rods from melts

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49107986A (en) * 1973-02-19 1974-10-14

Also Published As

Publication number Publication date
IT1044681B (en) 1980-04-21
DE2546246C2 (en) 1982-08-26
DE2546246A1 (en) 1976-04-29
CH613637A5 (en) 1979-10-15
JPS5164482A (en) 1976-06-03
GB1524521A (en) 1978-09-13

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