JPS5523800B2 - - Google Patents

Info

Publication number
JPS5523800B2
JPS5523800B2 JP6341673A JP6341673A JPS5523800B2 JP S5523800 B2 JPS5523800 B2 JP S5523800B2 JP 6341673 A JP6341673 A JP 6341673A JP 6341673 A JP6341673 A JP 6341673A JP S5523800 B2 JPS5523800 B2 JP S5523800B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6341673A
Other languages
Japanese (ja)
Other versions
JPS4962301A (show.php
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4962301A publication Critical patent/JPS4962301A/ja
Publication of JPS5523800B2 publication Critical patent/JPS5523800B2/ja
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/20Heating of the molten zone by induction, e.g. hot wire technique

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Induction Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
JP6341673A 1972-06-07 1973-06-07 Expired JPS5523800B2 (show.php)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722227750 DE2227750C3 (de) 1972-06-07 1972-06-07 Vorrichtung zum tiegelfreien Zonenschmelzen eines stabförmigen Körpers aus kristallinem Material, insbesondere aus Halbleitermaterial

Publications (2)

Publication Number Publication Date
JPS4962301A JPS4962301A (show.php) 1974-06-17
JPS5523800B2 true JPS5523800B2 (show.php) 1980-06-25

Family

ID=5847082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6341673A Expired JPS5523800B2 (show.php) 1972-06-07 1973-06-07

Country Status (6)

Country Link
JP (1) JPS5523800B2 (show.php)
BE (1) BE800620A (show.php)
DE (1) DE2227750C3 (show.php)
DK (1) DK136701C (show.php)
IT (1) IT989026B (show.php)
NL (1) NL7302802A (show.php)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4521621B2 (ja) * 1999-05-24 2010-08-11 Sumco Techxiv株式会社 半導体単結晶製造方法

Also Published As

Publication number Publication date
BE800620A (fr) 1973-10-01
NL7302802A (show.php) 1973-12-11
DE2227750B2 (de) 1979-12-13
DE2227750C3 (de) 1980-08-28
DK136701B (da) 1977-11-14
DK136701C (da) 1978-06-12
DE2227750A1 (de) 1973-12-20
JPS4962301A (show.php) 1974-06-17
IT989026B (it) 1975-05-20

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