JPS5523238B2 - - Google Patents

Info

Publication number
JPS5523238B2
JPS5523238B2 JP4147972A JP4147972A JPS5523238B2 JP S5523238 B2 JPS5523238 B2 JP S5523238B2 JP 4147972 A JP4147972 A JP 4147972A JP 4147972 A JP4147972 A JP 4147972A JP S5523238 B2 JPS5523238 B2 JP S5523238B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4147972A
Other languages
Japanese (ja)
Other versions
JPS4849379A (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4849379A publication Critical patent/JPS4849379A/ja
Publication of JPS5523238B2 publication Critical patent/JPS5523238B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • General Induction Heating (AREA)
  • Silicon Compounds (AREA)
JP4147972A 1971-06-08 1972-04-26 Expired JPS5523238B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712128506 DE2128506A1 (de) 1971-06-08 1971-06-08 Verfahren zum Herstellen von einkristallinen Halbleiterstäben, insbesondere aus Silicium, welche frei von Kristallversetzungen, insbesondere in Form von Swirls, sind

Publications (2)

Publication Number Publication Date
JPS4849379A JPS4849379A (en:Method) 1973-07-12
JPS5523238B2 true JPS5523238B2 (en:Method) 1980-06-21

Family

ID=5810219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4147972A Expired JPS5523238B2 (en:Method) 1971-06-08 1972-04-26

Country Status (8)

Country Link
JP (1) JPS5523238B2 (en:Method)
BE (1) BE784592A (en:Method)
CH (1) CH566811A5 (en:Method)
DE (1) DE2128506A1 (en:Method)
FR (1) FR2140423B1 (en:Method)
GB (1) GB1346542A (en:Method)
IT (1) IT956185B (en:Method)
NL (1) NL7203338A (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852959B2 (ja) * 1979-09-27 1983-11-26 電気化学工業株式会社 単結晶育成法
US5185375A (en) * 1987-12-18 1993-02-09 May & Baker Limited Thioformamide derivatives

Also Published As

Publication number Publication date
GB1346542A (en:Method) 1974-02-13
IT956185B (it) 1973-10-10
NL7203338A (en:Method) 1972-12-12
BE784592A (fr) 1972-10-02
FR2140423B1 (en:Method) 1977-12-23
DE2128506A1 (de) 1972-12-14
JPS4849379A (en:Method) 1973-07-12
FR2140423A1 (en:Method) 1973-01-19
CH566811A5 (en:Method) 1975-09-30

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