JPS5522439B2 - - Google Patents

Info

Publication number
JPS5522439B2
JPS5522439B2 JP7824672A JP7824672A JPS5522439B2 JP S5522439 B2 JPS5522439 B2 JP S5522439B2 JP 7824672 A JP7824672 A JP 7824672A JP 7824672 A JP7824672 A JP 7824672A JP S5522439 B2 JPS5522439 B2 JP S5522439B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7824672A
Other languages
Japanese (ja)
Other versions
JPS4829607A (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4829607A publication Critical patent/JPS4829607A/ja
Publication of JPS5522439B2 publication Critical patent/JPS5522439B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/28—Tubular capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Induction Heating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)
JP7824672A 1971-08-17 1972-08-04 Expired JPS5522439B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2141188A DE2141188C3 (de) 1971-08-17 1971-08-17 Vorrichtung für das tiegellose Zonenschmelzen

Publications (2)

Publication Number Publication Date
JPS4829607A JPS4829607A (en:Method) 1973-04-19
JPS5522439B2 true JPS5522439B2 (en:Method) 1980-06-17

Family

ID=5816983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7824672A Expired JPS5522439B2 (en:Method) 1971-08-17 1972-08-04

Country Status (8)

Country Link
US (1) US3769484A (en:Method)
JP (1) JPS5522439B2 (en:Method)
BE (1) BE787668A (en:Method)
DE (1) DE2141188C3 (en:Method)
FR (1) FR2149483B1 (en:Method)
GB (1) GB1349106A (en:Method)
IT (1) IT963844B (en:Method)
NL (1) NL7208496A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114114U (ja) * 1984-07-02 1986-01-27 マツダ株式会社 モ−ル取付用クリツプ

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2425468C3 (de) * 1974-05-27 1979-01-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum tiegellosen Zonenschmelzen eines kristallisierbaren Stabes
DE2538812A1 (de) * 1975-09-01 1977-03-03 Wacker Chemitronic Verfahren zum dotieren von halbleiterstaeben
JPS5290543A (en) * 1976-01-23 1977-07-29 Iwao Hishida Granular compositions of waxes
DE2700856A1 (de) * 1977-01-11 1978-07-13 Raphael Dr Leonhardt Vorrichtung zum zuechten von kristallen oder fuer dgl. verfahren
JP2503077B2 (ja) * 1989-07-05 1996-06-05 日本碍子株式会社 電気ヒ―タ及びそれを用いた加熱方法
US20130112134A1 (en) * 2009-02-23 2013-05-09 Giga Industries, Inc. Method and Systems for Characterization and Production of High Quality Silicon
EP3057184B1 (de) * 2015-02-11 2017-01-25 MD Elektronik GmbH Verfahren und Vorrichtung zum Herstellen eines Kabels sowie ein nach dem Verfahren hergestelltes Kabel

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1076623B (de) * 1957-11-15 1960-03-03 Siemens Ag Vorrichtung zum tiegelfreien Zonenziehen von stabfoermigem Halbleitermaterial
US3339130A (en) * 1964-07-02 1967-08-29 Gen Motors Corp Capacitor means
US3484679A (en) * 1966-10-03 1969-12-16 North American Rockwell Electrical apparatus for changing the effective capacitance of a cable
DE1916317C3 (de) * 1969-03-29 1975-07-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Stromzuführung für eine Induktionsspule beim tiegelfreien Zonenschmelzen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114114U (ja) * 1984-07-02 1986-01-27 マツダ株式会社 モ−ル取付用クリツプ

Also Published As

Publication number Publication date
DE2141188C3 (de) 1979-09-13
FR2149483B1 (en:Method) 1976-01-23
GB1349106A (en) 1974-03-27
IT963844B (it) 1974-01-21
JPS4829607A (en:Method) 1973-04-19
NL7208496A (en:Method) 1973-02-20
DE2141188B2 (de) 1979-01-11
BE787668A (fr) 1972-12-18
US3769484A (en) 1973-10-30
DE2141188A1 (de) 1973-02-22
FR2149483A1 (en:Method) 1973-03-30

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