JPS5522027B2 - - Google Patents
Info
- Publication number
- JPS5522027B2 JPS5522027B2 JP13365474A JP13365474A JPS5522027B2 JP S5522027 B2 JPS5522027 B2 JP S5522027B2 JP 13365474 A JP13365474 A JP 13365474A JP 13365474 A JP13365474 A JP 13365474A JP S5522027 B2 JPS5522027 B2 JP S5522027B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/082—Ion implantation FETs/COMs
Landscapes
- Non-Volatile Memory (AREA)
- Knitting Machines (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13365474A JPS5522027B2 (cg-RX-API-DMAC7.html) | 1974-11-22 | 1974-11-22 | |
| US05/634,187 US4043024A (en) | 1974-11-22 | 1975-11-21 | Method of manufacturing a semiconductor storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13365474A JPS5522027B2 (cg-RX-API-DMAC7.html) | 1974-11-22 | 1974-11-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5160471A JPS5160471A (cg-RX-API-DMAC7.html) | 1976-05-26 |
| JPS5522027B2 true JPS5522027B2 (cg-RX-API-DMAC7.html) | 1980-06-13 |
Family
ID=15109820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13365474A Expired JPS5522027B2 (cg-RX-API-DMAC7.html) | 1974-11-22 | 1974-11-22 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4043024A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS5522027B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5927110B2 (ja) * | 1975-08-22 | 1984-07-03 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| US4357571A (en) * | 1978-09-29 | 1982-11-02 | Siemens Aktiengesellschaft | FET Module with reference source chargeable memory gate |
| JPS583290A (ja) * | 1981-06-29 | 1983-01-10 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | メモリ・アレイ |
| DE3138960A1 (de) * | 1981-09-30 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur erzeugung elektrisch leitender schichten |
| US4634473A (en) * | 1985-09-09 | 1987-01-06 | Rca Corporation | Method for fabricating a radiation hardened oxide having structural damage |
| US5108940A (en) * | 1987-12-22 | 1992-04-28 | Siliconix, Inc. | MOS transistor with a charge induced drain extension |
| US5243212A (en) * | 1987-12-22 | 1993-09-07 | Siliconix Incorporated | Transistor with a charge induced drain extension |
| CA1276314C (en) * | 1988-03-24 | 1990-11-13 | Alexander Kalnitsky | Silicon ion implanted semiconductor device |
| US5264380A (en) * | 1989-12-18 | 1993-11-23 | Motorola, Inc. | Method of making an MOS transistor having improved transconductance and short channel characteristics |
| US5250455A (en) * | 1990-04-10 | 1993-10-05 | Matsushita Electric Industrial Co., Ltd. | Method of making a nonvolatile semiconductor memory device by implanting into the gate insulating film |
| US5418174A (en) * | 1992-06-26 | 1995-05-23 | Sgs-Thomson Microelectronics, Inc. | Method of forming radiation hard integrated circuits |
| JP3433808B2 (ja) * | 1992-08-05 | 2003-08-04 | 株式会社日立製作所 | 半導体集積回路装置 |
| US5387530A (en) * | 1993-06-29 | 1995-02-07 | Digital Equipment Corporation | Threshold optimization for soi transistors through use of negative charge in the gate oxide |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3328210A (en) * | 1964-10-26 | 1967-06-27 | North American Aviation Inc | Method of treating semiconductor device by ionic bombardment |
| US3413531A (en) * | 1966-09-06 | 1968-11-26 | Ion Physics Corp | High frequency field effect transistor |
| US3507709A (en) * | 1967-09-15 | 1970-04-21 | Hughes Aircraft Co | Method of irradiating dielectriccoated semiconductor bodies with low energy electrons |
| US3873373A (en) * | 1972-07-06 | 1975-03-25 | Bryan H Hill | Fabrication of a semiconductor device |
| US3852120A (en) * | 1973-05-29 | 1974-12-03 | Ibm | Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices |
| JPS5016481A (cg-RX-API-DMAC7.html) * | 1973-06-09 | 1975-02-21 |
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1974
- 1974-11-22 JP JP13365474A patent/JPS5522027B2/ja not_active Expired
-
1975
- 1975-11-21 US US05/634,187 patent/US4043024A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4043024A (en) | 1977-08-23 |
| JPS5160471A (cg-RX-API-DMAC7.html) | 1976-05-26 |