JPS5519741A - Method of manufacturing electrode of semiconductor element - Google Patents

Method of manufacturing electrode of semiconductor element

Info

Publication number
JPS5519741A
JPS5519741A JP9239878A JP9239878A JPS5519741A JP S5519741 A JPS5519741 A JP S5519741A JP 9239878 A JP9239878 A JP 9239878A JP 9239878 A JP9239878 A JP 9239878A JP S5519741 A JPS5519741 A JP S5519741A
Authority
JP
Japan
Prior art keywords
semiconductor element
manufacturing electrode
electrode
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9239878A
Other languages
Japanese (ja)
Other versions
JPS5950212B2 (en
Inventor
Teizou Takahama
Hideo Takiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP9239878A priority Critical patent/JPS5950212B2/en
Priority to DE19792930395 priority patent/DE2930395A1/en
Publication of JPS5519741A publication Critical patent/JPS5519741A/en
Publication of JPS5950212B2 publication Critical patent/JPS5950212B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Pressure Sensors (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
JP9239878A 1978-07-28 1978-07-28 Method for manufacturing electrodes for semiconductor devices Expired JPS5950212B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9239878A JPS5950212B2 (en) 1978-07-28 1978-07-28 Method for manufacturing electrodes for semiconductor devices
DE19792930395 DE2930395A1 (en) 1978-07-28 1979-07-26 Contact layer prodn. on semiconductor using platinum contg. chromium - esp. for silicon strip strain gauge to give good contact and adhesion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9239878A JPS5950212B2 (en) 1978-07-28 1978-07-28 Method for manufacturing electrodes for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5519741A true JPS5519741A (en) 1980-02-12
JPS5950212B2 JPS5950212B2 (en) 1984-12-07

Family

ID=14053301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9239878A Expired JPS5950212B2 (en) 1978-07-28 1978-07-28 Method for manufacturing electrodes for semiconductor devices

Country Status (2)

Country Link
JP (1) JPS5950212B2 (en)
DE (1) DE2930395A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS626733A (en) * 1985-07-01 1987-01-13 Hagiwara Kazuyoshi Sand mold for casting

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1258580A (en) * 1967-12-28 1971-12-30
NL7117429A (en) * 1971-12-18 1973-06-20

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS626733A (en) * 1985-07-01 1987-01-13 Hagiwara Kazuyoshi Sand mold for casting

Also Published As

Publication number Publication date
DE2930395A1 (en) 1980-02-14
JPS5950212B2 (en) 1984-12-07

Similar Documents

Publication Publication Date Title
JPS5521198A (en) Method of manufacturing semiconductor device
JPS5694777A (en) Method of manufacturing semiconductor
JPS56107581A (en) Method of manufacturing semiconductor device
MY8500674A (en) Method of manufacturing semiconductor devices
JPS5320771A (en) Method of manufacturing semiconductor element
JPS54155782A (en) Method of fabricating semiconductor
JPS54115085A (en) Method of fabricating semiconductor
JPS5558520A (en) Method of manufacturing semiconductor device
JPS54153585A (en) Method of fabricating semiconductor device having contact
JPS5553416A (en) Improvement of method of manufacturing semiconductor device
ZW21579A1 (en) Method of manufacturing electrodes
JPS54107275A (en) Method of fabricating semiconductor
JPS5583184A (en) Method of fabricating electrode
JPS54127688A (en) Method of fabricating semiconductor
JPS556896A (en) Method of manufacturing semiconductor
JPS5519741A (en) Method of manufacturing electrode of semiconductor element
JPS5527616A (en) Method of mounting semiconductor element
JPS54132176A (en) Method of fabricating semiconductor
GB2025298B (en) Method of manufacturing electrode systems
JPS54131870A (en) Method of fabricating semiconductor mounting element
JPS5534495A (en) Method of manufacturing semiconductor device
JPS5528286A (en) Method of manufacturing contact
JPS54115084A (en) Method of fabricating semiconductor
JPS54122977A (en) Method of fabricating semiconductor
JPS5528226A (en) Method of manufacturing contact