JPS5519313B2 - - Google Patents

Info

Publication number
JPS5519313B2
JPS5519313B2 JP1330175A JP1330175A JPS5519313B2 JP S5519313 B2 JPS5519313 B2 JP S5519313B2 JP 1330175 A JP1330175 A JP 1330175A JP 1330175 A JP1330175 A JP 1330175A JP S5519313 B2 JPS5519313 B2 JP S5519313B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1330175A
Other versions
JPS50123534A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50123534A publication Critical patent/JPS50123534A/ja
Publication of JPS5519313B2 publication Critical patent/JPS5519313B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP1330175A 1974-02-04 1975-01-30 Expired JPS5519313B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/439,581 US3934059A (en) 1974-02-04 1974-02-04 Method of vapor deposition

Publications (2)

Publication Number Publication Date
JPS50123534A JPS50123534A (ja) 1975-09-29
JPS5519313B2 true JPS5519313B2 (ja) 1980-05-24

Family

ID=23745290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1330175A Expired JPS5519313B2 (ja) 1974-02-04 1975-01-30

Country Status (9)

Country Link
US (1) US3934059A (ja)
JP (1) JPS5519313B2 (ja)
BE (1) BE825126A (ja)
CA (1) CA1056658A (ja)
DE (1) DE2503109A1 (ja)
FR (1) FR2259915B1 (ja)
GB (1) GB1461034A (ja)
IT (1) IT1028204B (ja)
SE (1) SE419103B (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4407871A (en) * 1980-03-25 1983-10-04 Ex-Cell-O Corporation Vacuum metallized dielectric substrates and method of making same
US4431711A (en) * 1980-03-25 1984-02-14 Ex-Cell-O Corporation Vacuum metallizing a dielectric substrate with indium and products thereof
JPS5948873B2 (ja) * 1980-05-14 1984-11-29 ペルメレック電極株式会社 耐食性被覆を設けた電極基体又は電極の製造方法
GB2128636B (en) * 1982-10-19 1986-01-08 Motorola Ltd Silicon-aluminium alloy metallization of semiconductor substrate
US4495221A (en) * 1982-10-26 1985-01-22 Signetics Corporation Variable rate semiconductor deposition process
DE3730644A1 (de) * 1987-09-11 1989-03-30 Baeuerle Dieter Verfahren zur vorgegeben strukturierten abscheidung von mikrostrukturen mit laserlicht
US4876114A (en) * 1987-09-23 1989-10-24 International Business Machines Corporation Process for the self fractionation deposition of a metallic layer on a workpiece
US5201215A (en) * 1991-10-17 1993-04-13 The United States Of America As Represented By The United States Department Of Energy Method for simultaneous measurement of mass loading and fluid property changes using a quartz crystal microbalance
US6716740B2 (en) * 2001-10-09 2004-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for depositing silicon oxide incorporating an outgassing step

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2812411A (en) * 1955-09-30 1957-11-05 Hughes Aircraft Co Means for vapor deposition of metals
NL272593A (ja) * 1960-12-16
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
US3556837A (en) * 1967-11-22 1971-01-19 Gulf Energy & Environ Systems Composite and method of making same
US3518506A (en) * 1967-12-06 1970-06-30 Ibm Semiconductor device with contact metallurgy thereon,and method for making same
US3498818A (en) * 1968-01-23 1970-03-03 Gen Electric Method of making highly reflective aluminum films
US3620837A (en) * 1968-09-16 1971-11-16 Ibm Reliability of aluminum and aluminum alloy lands
US3594214A (en) * 1969-04-04 1971-07-20 United States Steel Corp Method of applying a zinc coating to a sheet-steel base

Also Published As

Publication number Publication date
SE7501153L (ja) 1975-08-05
IT1028204B (it) 1979-01-30
CA1056658A (en) 1979-06-19
JPS50123534A (ja) 1975-09-29
FR2259915A1 (ja) 1975-08-29
GB1461034A (en) 1977-01-13
DE2503109A1 (de) 1975-08-07
BE825126A (fr) 1975-05-29
US3934059A (en) 1976-01-20
FR2259915B1 (ja) 1981-06-19
SE419103B (sv) 1981-07-13

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