JPS55181339U - - Google Patents
Info
- Publication number
- JPS55181339U JPS55181339U JP1979080485U JP8048579U JPS55181339U JP S55181339 U JPS55181339 U JP S55181339U JP 1979080485 U JP1979080485 U JP 1979080485U JP 8048579 U JP8048579 U JP 8048579U JP S55181339 U JPS55181339 U JP S55181339U
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979080485U JPS635224Y2 (cg-RX-API-DMAC7.html) | 1979-06-12 | 1979-06-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979080485U JPS635224Y2 (cg-RX-API-DMAC7.html) | 1979-06-12 | 1979-06-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55181339U true JPS55181339U (cg-RX-API-DMAC7.html) | 1980-12-26 |
| JPS635224Y2 JPS635224Y2 (cg-RX-API-DMAC7.html) | 1988-02-12 |
Family
ID=29313823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1979080485U Expired JPS635224Y2 (cg-RX-API-DMAC7.html) | 1979-06-12 | 1979-06-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS635224Y2 (cg-RX-API-DMAC7.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012248803A (ja) * | 2011-05-31 | 2012-12-13 | Hitachi Cable Ltd | 金属塩化物ガスの発生装置および金属塩化物ガスの発生方法、並びに、ハイドライド気相成長装置、窒化物半導体ウエハ、窒化物半導体デバイス、窒化物半導体発光ダイオード用ウエハ、窒化物半導体自立基板の製造方法および窒化物半導体結晶 |
| JP2015173273A (ja) * | 2015-04-15 | 2015-10-01 | 株式会社サイオクス | 半導体ウエハの製造方法および半導体デバイスの製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS445159Y1 (cg-RX-API-DMAC7.html) * | 1965-12-06 | 1969-02-25 |
-
1979
- 1979-06-12 JP JP1979080485U patent/JPS635224Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS445159Y1 (cg-RX-API-DMAC7.html) * | 1965-12-06 | 1969-02-25 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012248803A (ja) * | 2011-05-31 | 2012-12-13 | Hitachi Cable Ltd | 金属塩化物ガスの発生装置および金属塩化物ガスの発生方法、並びに、ハイドライド気相成長装置、窒化物半導体ウエハ、窒化物半導体デバイス、窒化物半導体発光ダイオード用ウエハ、窒化物半導体自立基板の製造方法および窒化物半導体結晶 |
| JP2015173273A (ja) * | 2015-04-15 | 2015-10-01 | 株式会社サイオクス | 半導体ウエハの製造方法および半導体デバイスの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS635224Y2 (cg-RX-API-DMAC7.html) | 1988-02-12 |